Matsushita Electric Industrial Co., Ltd.

Osaka Research Institute of Industrial Science and Technology

Denso Corporation

Kuraray Co., Ltd.

Osaka University

Pi-Crystal Incorporation

Panasonic Corporation

Mayumi Uno

Noboru Yamada

Kenichi Nishiuchi

Junichi Takeya

Ken'ichi Nagata

Katsumi Kawahara

Kazuki Maeda

Masashi Nitani

Eiji Ohno

Rie Kojima

Takashi Inoue

Hideo Kusada

Takafumi Uemura

Hiroyuki Ohta

Yasuhiro Shirotani

Tetsuya Katoh

Kohei Hayashi

Kenichi Sakai

Soichi Obata

Kensuke Hata

Busang Cha

The present invention relates to a patterned fiber substrate comprising: a fiber substrate; and a pattern consisting of a functional material and formed on the fiber substrate, wherein at least a part of the functional material that constitutes the pattern is present in inside of the fiber substrate, the fiber substrate has a contact angle of 100 to 170° with pure water on its surface, and the pattern has a narrowest line width of 1 to 3000 μm.

Patterned fiber substrate

A flexible substrate and an electronic device having high flexibility as a whole including an element mounting portion and a connection terminal portion, and a production method of the electronic device are provided. The flexible substrate includes a flexible base, and a conductive wiring made of a conductive organic compound formed on the base, wherein part of the conductive wiring serves as a connection part with another electronic member. Further, an electronic deviceincludes flexible basesand, conductive wiringsandmade of a conductive organic compound formed on the bases, and electronic elementsandconnected to the conductive wirings, wherein part of the conductive wiring serves as a connection partwith another substrate.

Flexible substrate, electronic device, and method for manufacturing electronic device

A load sensor is constituted by a rib and a vertical transistor including an organic semiconductor film, and a load measurement can be executed based on a change of a gap between a drain electrode and a source electrode which is a channel length of the vertical transistor. Therefore, a change of a current Ids is in a linear relationship to a load applied to the load sensor.

Load sensor using vertical transistor

An organic transistor is provided with: an insulating substrate; a pair of insulating pedestals () that are arranged spaced apart from each other on the substrate and that form respectively raised flat surfaces; a source electrode () provided on the raised flat surface formed on one of the pedestals; a drain electrode () provided on the raised flat surface formed on the other pedestal; a gate electrode () provided on the substrate between the pair of pedestals; and an organic semiconductor layer () arranged in contact with the upper surfaces of the source electrode and the drain electrode. The gate electrode and the lower surface of the organic semiconductor layer vertically oppose each other across a gap region (), and the side surfaces of the pedestals facing the gap region are shaped such that the lower side edges recede apart from the gate electrode with respect to the upper side edges. A contact resistance between the source and drain electrodes and the organic semiconductor layer is reduced, high-speed response performance is enhanced by shortening the channel, and short-circuits between the source and drain electrodes and the gate electrode, which accompany shortening of the channel, can be avoided.

Transistor with source/drain electrodes on pedestals and organic semiconductor on source/drain electrodes, and method for manufacturing same

The optical information recording medium of the present invention includes an information layer provided on a substrate. The information layer includes: a recording layer with respect to which information can be recorded and reproduced through irradiation with a laser beam having a predetermined wavelength; a first protective layer that is located, with respect to the recording layer, on the side to which the laser beam is incident; and a second protective layer that is located, with respect to the recording layer, on the opposite side to the side to which the laser beam is incident. The refractive index nof the first protective layer and the refractive index nof the second protective layer at the predetermined wavelength of the laser beam that is used for recording and reproduction satisfy a relationship of n&#x3c;n

Optical information recording medium

At least one information layer including a recording layer contains a material that can exhibit a transition between two optically different states in response to irradiation with a laser beam as a main component is provided on a substrate, and the material is configured so as to exhibit an energy gap ranging from 0.9 eV to 2.0 eV in the amorphous state. The information layer is configured to have a light transmittance of not less than 30% when irradiated with a laser beam having a wavelength ranging from 300 nm to 450 nm. It is possible to achieve excellent recording/reproduction, even if a plurality of recording layers are provided in the recording medium, when this medium is irradiated with a laser beam with a wavelength in the foregoing range from one side of the medium.

Optical information recording medium, method of recording and reproducing, and optical recording and reproducing system

The present invention provides an optical information medium having excellent weather resistance and repeating characteristics. The optical information medium has a barrier layer between a protective layer and a recording layer. The barrier layer includes GeN or GeON, and at least one element selected from the group consisting of Al, B, Ba, Bi, C, Ca, Ce, Cr, Dy, Eu, Ga, H, In, K, La, Mn, N, Nb, Ni, Pb, Pd, S, Si, Sb, Sn, Ta, Te, Ti, V, W, Yb, Zn and Zr.

Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information

Optical information recording medium, method for producing the same, and method for recording and reproducing optical information

An optical information recording medium includes a recording layer that changes reversibly between a crystalline state and an amorphous state. The irradiation of the recording layer with laser beams at a predetermined wavelength changes the recording layer from one selected from the group consisting of the crystalline state and the amorphous state to the other state. The absorptance Ac of the laser beams in the recording layer when the recording layer is in the crystalline state is larger than the absorptance Aa of the laser beams in the recording layer when the recording layer is in the amorphous state. Crystallization accelerating layers for accelerating the change of the recording layer from the amorphous state to the crystalline state are formed in contact with both surfaces of the recording layer.

Optical information recording medium and method for recording and reproduction information thereon

An optical information recording medium is provided in which recording can be performed at higher speed with higher density by enabling the cooling power of the recording medium to be improved, the overwritten-mark distortion to be decreased, and an medium with high transmittance to be obtained. The optical information recording medium is formed by laminating, sequentially on a substrate: a protective layer; an interface layer; a recording layer whose optical characteristics are varied reversibly by irradiation of a laser beam; an interface layer; a light transmittance type reflective layer that transmits the laser beam with a wavelength &lgr;; and a thermal diffusion layer. A thickness d of the thermal diffusion layer is set to be within a range of 0<d&lE;({fraction (5/16)})&lgr;/n or ({fraction (7/16)})&lgr;/n&lE;d&lE;(&frac12;)&lgr;/n, wherein n indicates a refractive index of the thermal diffusion layer.

Optical information recording medium with thermal diffusion layer

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Osaka, Japan

Mayumi Uno