Tosoh Corporation

Sagami Chemical Research Center

Sagami Chemical Research Institute

Mayumi Takamori

Noriaki Oshima

Kazuhisa Kawano

Daiji Hara

Taishi Furukawa

Tetsu Yamakawa

Ken-ichi Tada

Kenichi Sekimoto

The present invention has the objects to provide a novel material for forming Si-containing film, especially a material containing a cyclic siloxane compound suitable to a PECVD equipment for low dielectric constant insulating film, and to provide an Si-containing film using the same, and a semiconductor device containing those films. The present invention relates to a material for forming Si-containing film, containing a cyclic siloxane compound represented by the following general formula (1) (In the formula, A represents a group containing at least one selected from the group consisting of an oxygen atom, a boron atom and a nitrogen atom, n is 1 or 2, and x is an integer of from 2 to 10.), and its use.

Cyclic siloxane compound, a material for forming Si-containing film, and its use

A novel tantalum compound, a method for producing the novel tantalum compound, and a method for stably forming a tantalum-containing thin film which contains the desired element. The tantalum compound enables one to selectively form a tantalum-containing thin film free of halogen and the like, and various tantalum-containing thin films which contain the desired element.

Tantalum compound, method for producing same, tantalum-containing thin film and method for forming same

An organometallic iridium compound having low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, a process for producing the compound, and a process for preparing iridium-based films using the organometallic compound are provided. The organometallic iridium compound represented by the formula (1) (example of specific compound: (ethylcyclopentadienyl)bis(ethylene)iridium) is obtained by reacting a compound represented by the formula (4) with a compound represented by the formula (2) or (3) An iridium-based film is prepared using the compound as a precursor. In the formulae, Rrepresents hydrogen atom or a lower alkyl group; Rrepresents a lower alkyl group; X represents a halogen atom; and M represents an alkali metal.

Organometallic iridium compound, process for producing the same and process for preparing film

An organometallic compound having a low melting point, excellent vaporization characteristic and low film formation temperature on a substrate, for forming an iridium-containing thin film by the CVD process is provided. The organometallic iridium compound is represented by the following general formula (1) or (2):wherein Rrepresents hydrogen or a lower alkyl group; Rto Reach represents hydrogen, a halogen, or the like, provided that specific combinations of Rto Rare excluded; Rrepresents a lower alkyl group; Rto Reach represents hydrogen, a halogen, or the like, provided that specific combinations of Rto Rare excluded. Iridium-containing thin films are produced by using the compound as a precursor by CVD process.

Growing community of inventors

Sagamihara, Japan

Mayumi Takamori