Fujitsu Corporation

Kyushu Fujitsu Electronics Limited

Other

Fujistsu Limited

Mayumi Osumi

Toshimi Kawahara

Junichi Kasai

Mitsunada Osawa

Shinichirou Taniguchi

Yoshitugu Katoh

Hiroyuki Ishiguro

Shinya Nakaseko

Yuji Sakurai

Sinya Nakaseko

Kaoru Hashimoto

Masayuki Ochiai

Hiroyuki Ishiquro

A semiconductor device includes a semiconductor element, a holding substrate holding the semiconductor element, a frame body provided on the holding substrate so as to surround the semiconductor element and having a hole which communicates to a space formed between the holding substrate and the frame body and the frame body and the holding substrate form a housing, a plurality of leads having inner lead portions connected to the semiconductor element and outer lead portions extending outside the frame body, and a resin filling the space and encapsulating the semiconductor element and the inner lead portions. All of the outer lead portions extend outside the housing from one side of the housing.

Semiconductor device and method of producing the same and semiconductor device unit and method of producing the same

Semiconductor device and method of producing the same and semiconductor

A semiconductor device includes a semiconductor chip, and a multi-layered member connected to the semiconductor chip. The multi-layered member includes one or a plurality of wiring layers and one or a plurality of insulating layers alternately stacked. The one or the plurality of insulating layers have holes. The multi-layered member has electrode parts which include deformed portions of the above one or the plurality of wiring layers obtained by deforming the above one or the plurality of wiring layers via said holes.

Semiconductor integrated circuit device having stacked wiring and

A semiconductor device includes a substrate having top and bottom surfaces, a semiconductor element mounted on the top surface of the substrate, and a resin package made of a resin and encapsulating the semiconductor element. The substrate includes at least one resin gate hole enabling the resin to be introduced from the bottom surface of the substrate via the resin gate hole when encapsulating the semiconductor element by the resin.

Semiconductor device and method of producing the same

Semiconductor device having resin gate hole through substrate for resin

Metal such as solder is immersed in a heating medium containing a rosin or derivative thereof and an organic solvent and heated to a temperature above the melting point of the metal, to remove the oxide film of the metal and make the metal spherical. If a hardened caster oil or high softening point rosin or derivative thereof is further added as a thickener to the heating medium, the size increase of the metal particle can be prevented. By heating at a temperature lower than the melting point of the metal, the oxide film can be removed without making the particles spherical. Using thus obtained solder particles, fluxless soldering can be done. Also, a fluxless soldering method is provided.

Methods for making metal particle spherical and removing oxide film

Growing community of inventors

Kawasaki, Japan

Mayumi Osumi