Semiconductor Energy Laboratory Co., Ltd.

Mayumi Mizukami

Shunpei Yamazaki

Toshimitsu Konuma

Jun Koyama

Toru Takayama

Junya Maruyama

Kazutaka Inukai

Hisao Ikeda

Takeshi Nishi

Tetsuo Tsutsui

Yasuyuki Arai

Satoshi Seo

Shunpei Yamzaki

The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layeris provided on the substrate, and further, the oxide layerbeing contact with the foregoing metal layer or nitride layeris provided, and furthermore, if the lamination film formation or the heat processing of 500&#xb0; C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layerby the physical means.

Semiconductor device and peeling off method and method of manufacturing semiconductor device

A plurality of pixels are arranged on the substrate. Each of the pixels is provided with an EL element which utilizes as a cathode a pixel electrode connected to a current control TFT. On a counter substrate, a light shielding film, a first color filter having a first color and a second color filter having a second color are provided. The second color is different from the first color.

EL display device and method for manufacturing the same

A display device has a plurality of pixels which are arranged on a substrate. Each of the pixels is provided with an EL element which utilizes as a cathode a pixel electrode connected to a current control TFT. On a counter substrate, a light shielding film, a first color filter having a first color and a second color filter have a second color are provided. The second color is different from the first color.

Display device

By repeating a purification process of a light-emitting organic compound several times, a thin film made of the light-emitting organic compound to be used in an EL display device contains ionic impurities at the concentration of 0.1 ppm or lower and has a volume resistivity in the range of 3&#xd7;10&#x3a9;cm or larger. By using such a thin film as a light-emitting layer in the EL device, a current caused by reasons other than the carrier recombination can be prevented from flowing through the thin film, and deterioration caused by unnecessary heat generation can be suppressed. Accordingly, it is possible to obtain an EL display device with high reliability.

Light-emitting organic compound and EL display device utilizing the same

A light-emitting device includes a transistor over a substrate and an insulating film over the transistor. The light-emitting device further includes a wiring over the insulating film and a light-emitting element. The insulating film includes a first opening and a second opening, and the wiring is electrically connected to the transistor through the first opening. The light-emitting element is provided in the second opening, and includes a first electrode, a second electrode, and an organic compound layer provided between the first electrode and the second electrode.

Light-emitting device having mixed layer including hole transporting compound

To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer () is sandwiched between a transparent electrode () and a cathode (), a film thickness of the EL layer () and a film thickness of the transparent electrode () are equivalent to the film thicknesses in which there is no occurrence of a guided light, and an inert gas is filled in a space between the transparent electrode () and a cover material ().

Self light-emitting device

EL display device

The luminance of different colors of light emitted from EL elements in a pixel portion of a light emitting device is equalized and the luminance of light emitted from the EL elements is raised. The pixel portion of the light emitting device has EL elements whose EL layers contain triplet compounds and EL elements whose EL layers contain singlet compounds in combination. The luminance of light emitted from the plural EL elements is thus equalized. Furthermore, a hole transporting layer has a laminate structure to thereby cause the EL elements to emit light of higher luminance.

Light emitting device

There is provided an electronic device having high reliability and high color reproducibility. A pixel structure is made such that a switching FET () and an electric current controlling FET () are formed on a single crystal semiconductor substrate (), and an EL element () is electrically connected to the electric current controlling FET (). The fluctuation in characteristics of the electric current controlling FET () is very low among pixels, and an image with high color reproducibility can be obtained. By taking hot carrier measures in the electric current controlling FET (), the electronic device having high reliability can be obtained.

Growing community of inventors

Kanagawa, Japan

Mayumi Mizukami