Taiwan Semiconductor Manufacturing Comp. Ltd.

Maybe Chen

Yu-Der Chih

Jonathan Tsung-Yung Chang

Ya-Chin King

Chrong Jung Lin

Yun-Sheng Chen

Hsin-Yuan Yu

Wen Zhang Lin

Disclosed herein are related to a memory cell including one or more programmable resistors and a control transistor. In one aspect, a programmable resistor includes a gate structure and one or more source/drain structures for forming a transistor. A resistance of the programmable resistor may be set by applying a voltage to the gate structure, while the control transistor is enabled. Data stored by the programmable resistor can be read by sensing current through the programmable resistor, while the control transistor is disabled. In one aspect, the one or more programmable resistors and the control transistor are implemented by same type of components, allowing the memory cell to be formed in a compact manner through a simplified the fabrication process.

Memory cell including programmable resistors with transistor components

Growing community of inventors

Hsinchu, Taiwan

Maybe Chen