Siltronic Ag

Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh

Wacker Siltronic Gesellschaft F&uuml;r Halbleiter Materialien Ag

Wacker Siltronic Gesellschaft Fur Halbleitermaterialien

Wacker Siltronic Gesellschaft F&uuml;r Halbleitermaterialien

Centrotherm Sitec Gmbh

Maximilian Stadler

Karlheinz Langsdorf

G&uuml;nter Schwab

Peter Romeder

Günter Schwab

Guenter Schwab

Helmut Franke

Diego Feijóo

Gunter Schwab

Thomas Teuschler

Edeltraut Pichelmeier

Schwab Gunter

Gabriele Trifellner

A polished semiconductor wafer has a front surface and a back surface and an edge R, which is located at a distance of a radius from a center of the semiconductor wafer, forms a periphery of the semiconductor wafer and is part of a profiled boundary of the semiconductor wafer. The maximum deviation of the flatness of the back surface from an ideal plane in a range between R-6 mm and R-1 mm of the back surface is 0.7 &#x3bc;m or less. A process for producing the semiconductor wafer, comprises at least one treatment of the semiconductor wafer with a liquid etchant and at least one polishing of at least a front surface of the semiconductor wafer, the etchant flowing onto a boundary of the semiconductor wafer during the treatment, and the boundary of the semiconductor wafer which faces the flow of etchant being at least partially shielded from being struck directly by the etchant. The shielding extends in the direction of a thickness d of the semiconductor wafer and is at least d+100 &#x3bc;m long.

Polished semiconductor wafer and process for producing it

Semiconductor wafers are cut from a crystal and subjected to a series of processing steps in which material is removed from a front side and a rear side of the semiconductor wafers, comprising the following processing steps:

Method for producing a polished semiconductor

A device and process for the wet-chemical treatment of silicon using an etching liquid that contains water, nitric acid and hydrofluoric acid. The etching liquid is activated by introducing nitrogen oxide (NO) into the etching liquid, before being used for the wet-chemical treatment of silicon. The device consists of a first vessel in which silicon is subjected to a wet-chemical treatment with the aid of an etching liquid, a second vessel in which fresh etching liquid is held ready, and a connecting line between the first vessel and the second vessel, through which nitrogen oxides (NO) formed in the first vessel during the wet-chemical treatment are passed to the second vessel.

Process and device for the wet-chemical treatment of silicon

A process for the wet chemical treatment of a semiconductor wafer in a vessel, in which the semiconductor wafer is brought into contact with a liquid in which very small gas bubbles are dispersed. Two circuits are set up for conveying the liquid, with a first circuit between a reservoir and the vessel, for conveying the liquid from the reservoir to the vessel; and with a second circuit from the reservoir back to the reservoir, in order to enrich the liquid with a gas on the way back to the reservoir, so that the gas bubbles can form.

Process for the wet chemical treatment of a semiconductor wafer

A process for the wet-chemical surface treatment of a semiconductor wafer following a mechanical surface treatment, in particular following a mechanical surface treatment in a lapping machine, includes a sequence of treatment steps. The process essentially includes a wet-chemical surface cleaning, preferably for neutralizing and eliminating the lapping slurry, an acid etching treatment, preferably for eliminating the mechanically imposed damage and for surface smoothing and removal of metals. There is a final step of drying and rendering the cleaned and etched surface hydrophilic.

Process for the wet-chemical surface treatment of a semiconductor wafer

A process for treating semiconductor material with an acid-containing fluid, has water being formed as a product of a chemical reaction. Before and/or during the treatment of the semiconductor material, phosphorus pentoxide is added to the acid-containing fluid.

Process for treating semiconductor material with an acid-containing fluid

A magazine is provided for holding disk-type workpieces, in particular seonductor wafers, in the wet-chemical surface treatment in liquid baths. The magazine is particularly useful for etching semiconductor wafers in a liquid bath, which contains an insert (5) which has a diameter of 1.1-1.9 times the diameter of the wafer (6) and which has arrangements of guide strut assemblies (12) held parallel at a spacing of at least twice the wafer thickness by spacing struts (8). The guide strut assemblies (12) comprise main guide struts (9) and subsidiary guide struts (10) which diverge at the linking points (13), which do not lie on the housing axis, in not more than three directions. This etching magazine makes possible a marked reduction in the deterioration in the wafer geometry normally observed in etching treatments.

Growing community of inventors

Haiming, Germany

Maximilian Stadler