Rf360 Singapore Pte. Ltd.

Snaptrack Incorporated

Qualcomm Incorporated

Rf360 Europe Gmbh

Maximilian Schiek

Willi Aigner

Christian Huck

Christian Ceranski

Thomas Mittermaier

Roland Rosezin

Edgar Schmidhammer

Alexandre Augusto Shirakawa

Gilles Moulard

Tomasz Jewula

Bernhard Bader

Xavier Perois

Monika Schmiedgen

Andre Schwobel

Franz Sebastian Fries

Günter Scheinbacher

Ulrike Roesler

Giuseppe Toscano

A BAW device comprises a first BAW resonator () and a second BAW resonator (). The first BAW resonator and the second BAW resonator each comprise a first electrode (), a second electrode () and a piezoelectric layer () being arranged in each case between the first electrode and the second electrode of the associated BAW resonator. The first electrodes, the second electrodes and the piezoelectric layers of both BAW resonators are designed essentially identically. A first conductor track () extends from the first electrode of the second BAW resonator to a third electric element () of the BAW device and electrically connects said first electrode with said third electric element. A first dummy conductor track () extends from the first electrode of the first BAW resonator, is electrically connected to said first electrode and, apart from said first electrode, is not electrically connected to any further electric element. The first dummy conductor track is designed such that it influences the acoustic and capacitive properties of the first BAW resonator essentially in the same way as the first conductor track influences the acoustic and capacitive properties of the second BAW resonator.

Bulk acoustic wave device with reduced non-linearities

A method for forming an aluminum nitride layer () comprises the provision of a substrate () and the forming of a patterned metal nitride layer (). A bottom electrode metal layer () is formed on the exposed portions () of the substrate. An aluminum nitride layer portion () grown above the exposed portion () of the substrate () exhibits piezoelectric properties. An aluminum nitride layer portion () grown above the patterned metal nitride layer () exhibits no piezoelectric properties (). Both aluminum nitride layer portions () are grown simultaneously.

Method for forming an aluminum nitride layer

A BAW resonator comprises a bottom electrode, a piezoelectric layer and a top electrode. A top electrode connection is arranged in a plane above the top electrode. For doing this a spacer is arranged on the top electrode. A capping layer is sitting on the spacer distant from the top electrode such that an air-filled gap to the top electrode is kept. The top electrode connection can now be arranged above the capping layer. An electrically conductive path connects the top electrode and the top electrode connection. Such a resonator needs only one lateral design and can provide a low-ohmic interconnection of resonators e.g. in a filter circuit.

Baw resonator with improved top electrode connection

A bulk acoustic wave resonator device comprises bottom and top electrodes (). A piezoelectric layer () sandwiched therebetween has a thickness in the active resonator area different from the thickness in the surrounding area. A method of manufacturing the device comprises a bonding of a piezoelectric wafer to a carrier wafer and splitting a portion of the piezoelectric wafer by an ion-cut technique. Different thicknesses of the piezoelectric layer in the active area and the surrounding area are achieved by implanting ions at different depths.

Bulk acoustic wave resonator device and method of manufacturing thereof

A BAW resonator (BAWR) with improved power durability and improved heat resistance is provided. The resonator comprises a layer stack with a piezoelectric material (PM) between a bottom electrode (ELI) and a top electrode (EL) and a shunt path parallel (PCPP) to the layer stack provided to enable an RF signal to bypass the layer stack, e.g. to ground (GND). The shunt path (PCPP) has a temperature dependent conductance with a negative temperature coefficient, NTC, of resistance. When the temperature of the device rises due to high power operation, currents that would otherwise permanently damage the device are shunted to ground or another dedicated terminal by the temperature dependent shunt path. Upon cooling down normal operation is resumed.

BAW resonator with improved power durability and heat resistance and RF filter comprising a BAW resonator

A BAW resonator with an improved lateral energy confinement is provided. The resonator has a bottom electrode in a bottom electrode layer, a top electrode in a top electrode layer and a piezoelectric layer between the bottom electrode layer and the top electrode layer. The piezoelectric layer comprises piezoelectric materials of different piezoelectric polarities.

BAW resonator, RF filter, multiplexer and method of manufacturing a BAW resonator

The invention combines two filter technologies on a single device using the same substrate there for. On this substrate a filter circuit is arranged that has a ladder-type or a lattice arrangement of series and parallel impedance elements to provide a hybrid filter having for example a band pass function. The impedance elements are chosen from BAW resonators and LC elements.

Hybrid filter

In order to improve heat dissipation from electrical components with heat-generating component structures, it is proposed to provide a radiation layer with a large surface in the area of the component structures. Preferably, the radiation layer is very heat-conductive or in heat-conductive connection with the component structures.

Electrical component with heat dissipation

A filter comprising first and second BAW resonators. The first BAW resonator having a piezoelectric layer, located between a top electrode and a bottom electrode, and a dielectric layer located between the bottom electrode and an additional electrode. Wherein the dielectric layer, the bottom electrode and the additional electrode are configured to provide an additional capacitance in the resonator. The second BAW resonator having at least one less electrode than the first BAW resonator.

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Puchheim, Germany

Maximilian Schiek