Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Globalfoundries Dresden Module One Limited Liability Company & Co. Kg.

Maximilian Ludwig Drescher

Patrick Polakowski

Johannes Mueller

Stefan Riedel

Violetta Sessi

Structures including field-effect transistors and methods of forming a structure including field-effect transistors. A first field-effect transistor includes a first source/drain terminal and a second source/drain terminal, and a second field-effect transistor includes a third source/drain terminal and a fourth source/drain terminal. The first source/drain terminal and the second source/drain terminal each include a fully-silicided section located at and above a top surface of a semiconductor layer. The third source/drain terminal and the fourth source/drain terminal each include a partially-silicided section located over the top surface of the semiconductor layer.

Silicided source/drain terminals for field-effect transistors

The invention relates to a method for manufacturing a microelectronic circuit. A substrate is provided. A source contact, a bulk contact and a drain contact are each produced for a transistor and for a memory transistor. In a respective common step, an insulating layer of the transistor and an insulating layer of the memory transistor as well as a metal layer of the transistor and a metal layer of the memory transistor are produced. At least one capacitor is produced as part of the memory transistor. Gate contacts connected to the metal layer of the transistor and connected to a metal layer of the capacitor of the memory transistor, respectively, are produced. Furthermore, the invention relates to a microelectronic circuit.

Growing community of inventors

Dresden, Germany

Maximilian Ludwig Drescher