Infineon Technologies Ag

Maximilian Krug

Robert Illing

Werner Robl

Stefan Woehlert

Michael Nelhiebel

Michael Rogalli

Thomas Detzel

Sven Lanzerstorfer

Johann Gross

A semiconductor device includes a base element and a copper element over the base element. The copper element includes a layer stack having at least two copper layers and at least one intermediate conductive layer of a material different from copper. The at least two copper layers and the at least one intermediate conductive layer are alternately stacked over each other.

Semiconductor device having a copper element and method of forming a semiconductor device having a copper element

An integrated circuit includes a base element and a copper element over the base element, the copper element having a thickness of at least 5 &#x3bc;m and a ratio of average grain size to thickness of less than 0.7.

Integrated circuit and method of forming an integrated circuit

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Zeitlarn, Germany

Maximilian Krug