Commissariat a L'energie Atomique

Stmicroelectronics (crolles 2) Sas

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Maxime Rousseau

Bernard Viala

Alexis Farcy

An integrated microelectronic device is formed from a substrate having a first side and a second side and including a doped active zone () in the first side of the substrate. A circuit component is situated in the doped active zone. A through silicon via extends between the second side and the first side, the via being electrically isolated from the substrate by an insulating layer. A buffer zone is situated between the insulating layer and the doped active zone. This buffer zone is positioned under a shallow trench isolation zone provided around the doped active zone. The buffer zone functions to reduce the electrical coupling between the through silicon via and the doped active zone.

Integrated microelectronic device with through-vias

Substrates to be aligned include microcoils arranged at the level of their facing surfaces. In an alignment phase, power is supplied to at least the microcoils of the first substrate, whereas the inductance of the microcoils of the second substrate is measured. The microcoils are preferably flat microcoils in the form of a spiral or a serpentine.

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Grenoble, France

Maxime Rousseau