Samsung Electronics Co., Ltd.

Maxim Vladimirovich Ryabko

Sergey Nikolaevich Koptyaev

Alexey Dmitrievich Lantsov

Anton Nikolaevich Sofronov

Alexey Andreevich Shchekin

Michael Nikolaevich Rychagov

Alexey Grigorievich Anikanov

Aleksandr Shorokhov

Tatiana Igorevna Kopysova

Pavel Aleksandrovich Ivshin

Vasily Victorovich Grigorev

Alexander Vyacheslavovich Shcherbakov

A thermal sensor, a thermal sensor array, an electronic apparatus including the thermal sensor, and an operating method of the thermal sensor are provided. The thermal sensor includes a first region onto which first infrared light is incident, a visible light radiation region configured to radiate visible light generated by incidence of the first infrared light on the first region, a second region onto which second infrared light is incident, and an image sensor configured to receive the visible light radiated from the visible light radiation region. The first region, the second region, and the visible light radiation region each include a nonlinear optical material.

Thermal sensor, thermal sensor array, electronic apparatus including the thermal sensor, and operating method of the thermal sensor

A semiconductor laser light-emitting structure includes a semiconductor laser light-emitting structure having a vertical-cavity surface-emitting laser structure and configured to emit light having a first wavelength, and a wavelength converter including a metasurface and monolithically formed with the semiconductor laser light-emitting structure on a light output side of the semiconductor laser light-emitting structure, wherein the metasurface is configured to non-linearly convert the light having the first wavelength into light having a second wavelength.

Visible light-emitting semiconductor laser device and method of manufacturing the same

An infrared detector includes a substrate in which a void is formed, a micro-resonator suspended over the void, an infrared absorber on an upper surface of the micro-resonator, a thermal isolation bridge supporting the micro-resonator, a first waveguide optically coupled with the micro-resonator, a second waveguide intersecting the first waveguide and optically coupled with the micro-resonator, a light source optically coupled with the first waveguide, and a photodetector optically coupled with the second waveguide.

Infrared detector and infrared image sensor including the same

A system for extraction of optical properties of a turbid medium by using diffuse reflectometry may include at least one light source, an optical receiver, at least one separator, and at least one processor configured to control the optical receiver, while the radiation is provided to the turbid medium in the radiation input area of the at least one light source, to sequentially open each LC cell from the array of LC cells, and simultaneously receive radiation, passed through the sequentially opened LC cells and corresponding microlenses, by corresponding photodetectors from the array of photodetectors to obtain the distribution of radiation intensity; and extract the optical properties of the turbid medium based on the distribution of radiation intensity.

System, computing device, and method for extraction of optical properties of turbid medium by using diffuse reflectometry

An optical measurement system for measuring a critical dimension having a nanostructured surface including a nanostructure formed on a plane. The optical measurement system includes an image recording module including a microscope optical system which records a defocused image having an nonuniform degree of defocusing with respect to the nanostructured surface, an optical scheme parameter control module which sets and outputs to the microscope optical system optical scheme parameters for the microscope optical system, an image calculation module which receives receiving the optical scheme parameters set by the optical scheme parameter control module and calculates an image of the nanostructured surface, and a comparison module which compares the defocused image recorded by the image recording module and the image calculated by the image calculation module.

Optical measurement system and method for measuring critical dimension of nanostructure

Optical measuring systems for measuring geometrical parameters of nano-objects and methods of measuring a critical size (CS) are provided. The optical method of measuring the CS includes selecting parameters of an optic scheme and an illumination condition; recording a set of nanostructure images corresponding to various wavelengths with various defocusing levels of scattered radiation; calculating a plurality of sets of images of a nanostructure with various defocusing levels, corresponding to various wavelengths of the scattered radiation with CS values within a known range; and comparing a set of measured images of the nanostructure with the sets of the calculated images and determining a best approximate value of the CS values.

Growing community of inventors

Dolgoprudniy, Russia

Maxim Vladimirovich Ryabko