Applied Materials, Inc.

Maxim Shaposhnikov

Bindusagar Marath Sankarathodi

Zhiyuan Ye

Schubert S Chu

Patricia M Liu

Shu-Kwan Danny Lau

Zhepeng Cong

Ala Moradian

Zuoming Zhu

Jenny Lin

Flora Fong-Song Chang

Vilen K Nestorov

Enle Choo

Surendra Singh Srivastava

Errol Antonio C Sanchez

Wolfgang R Aderhold

Errol C Sanchez

Saurabh Chopra

Dayal Ramachandran

Balakrishnam R Jampana

Boris Axelrod

Embodiments disclosed herein include methods of processing substrates in a tool. In an embodiment, the method of processing the substrate in the tool, comprises receiving an augmented recipe with a machine learning (ML) and/or an artificial intelligence (AI) module. In an embodiment, the augmented recipe comprises, a recipe for processing the substrate in the tool, and a matrix identifier that corresponds to one or more substrate properties. In an embodiment the method further comprises using the ML and/or AI module to retrieve a data set from a database, where the data set is associated with the matrix identifier, and using the ML and/or AI module to modify the augmented recipe to form a modified recipe, where the modification is dependent on the data set.

Coded substrate material identifier communication tool

An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the measured temperatures of a substrate and the measured temperatures of the first surface.

Temperature profile measurement and synchronized control on substrate and susceptor in an epitaxy chamber

A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

Substrate processing monitoring

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Sunnyvale, CA, United States of America

Maxim Shaposhnikov