Sensor Electronic Technology, Inc.

Maxim S Shatalov

Michael Shur

Alexander Dobrinsky

Remigijus Gaska

Jinwei Yang

Rakesh B Jain

Wenhong Sun

Timothy James Bettles

Yuri Bilenko

Saulius Smetona

Mikhail Gaevski

Alexander Lunev

Robert Mark Kennedy

Grigory Simin

Arthur Peter Barber

Igor Agafonov

Arthur Peter Barber, Iii

Daniel Billingsley

Xuhong Hu

Jianyu Deng

Emmanuel N Lakios

Brandon A Robinson

Ignas Gaska

Faris Mills Morrison Estes

Carlton Gibson

Remigijua Gaska

A solution for controlling mildew in a cultivated area is described. The solution can include a set of ultraviolet sources that are configured to emit ultraviolet and/or blue-ultraviolet radiation to harm mildew present on a plant or ground surface. A set of sensors can be utilized to acquire plant data for at least one plant surface of a plant, which can be processed to determine a presence of mildew on the at least one plant surface. Additional features can be included to further affect the growth environment for the plant. A feedback process can be implemented to improve one or more aspects of the growth environment.

Radiation-based mildew control

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

Heterostructure including a semiconductor layer with graded composition

A semiconductor heterostructure for an optoelectronic device with improved light emission is disclosed. The heterostructure can include a first semiconductor layer having a first index of refraction n1. A second semiconductor layer can be located over the first semiconductor layer. The second semiconductor layer can include a laminate of semiconductor sublayers having an effective index of refraction n2. A third semiconductor layer having a third index of refraction n3 can be located over the second semiconductor layer. The first index of refraction n1 is greater than the second index of refraction n2, which is greater than the third index of refraction n3.

Semiconductor heterostructure with improved light emission

A solution for irradiating a flowing fluid through a channel with ultraviolet radiation is provided. Ultraviolet radiation sources can be located within the channel in order to direct ultraviolet radiation towards the flowing fluid and/or the interior of the channel. A valve can be located adjacent to the channel to control the flow rate of the fluid. A control system can control and adjust the ultraviolet radiation based on the flow rate of the fluid and a user input component can receive a user input for the control system to adjust the ultraviolet radiation. The ultraviolet radiation sources, the control system, the user input component, and any other components that require electricity can receive power from a rechargeable power supply. An electrical generator located within the channel can convert energy from the fluid flowing through the channel into electricity for charging the rechargeable power supply.

Ultraviolet irradiation of a flowing fluid

An approach for controlling light exposure of a light sensitive object is described. Aspects of this approach involve using a first set of radiation sources to irradiate the object with visible radiation and infrared radiation. A second set of radiation sources spot irradiate the object in a set of locations with a target ultraviolet radiation having a range of wavelengths. Radiation sensors detect radiation reflected from the object and environment condition sensors detect conditions of the environment in which the object is located during irradiation. A controller controls irradiation of the light sensitive object by the first and second set of radiation sources according to predetermined optimal irradiation settings specified for various environmental conditions. In addition, the controller adjusts irradiation settings of the first and second set of radiation sources as a function of measurements obtained by the various sensors.

Controlling light exposure of light sensitive object

A heterostructure, such as a group III nitride heterostructure, for use in an optoelectronic device is described. The heterostructure can include a sacrificial layer, which is located on a substrate structure. The sacrificial layer can be at least partially decomposed using a laser. The substrate structure can be completely removed from the heterostructure or remain attached thereto. One or more additional solutions for detaching the substrate structure from the heterostructure can be utilized. The heterostructure can undergo additional processing to form the optoelectronic device.

Heterostructure for an optoelectronic device

An approach for controlling ultraviolet intensity over a surface of a light sensitive object is described. Aspects involve using ultraviolet radiation with a wavelength range that includes ultraviolet-A and ultraviolet-B radiation to irradiate the surface. Light sensors measure light intensity at the surface, wherein each sensor measures light intensity in a wavelength range that corresponds to a wavelength range emitted from at least one of the sources. A controller controls the light intensity over the surface by adjusting the power of the sources as a function of the light intensity measurements. The controller uses the light intensity measurements to determine whether each source is illuminating the surface with an intensity that is within an acceptable variation with a predetermined intensity value targeted for the surface. The controller adjusts the power of the sources as a function of the variation to ensure an optimal distribution of light intensity over the surface.

Controlling intensity over a surface of a light sensitive object

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The electron blocking layer is located between the active region and the p-type contact layer. In an embodiment, the electron blocking layer can include a plurality of sublayers that vary in composition.

Heterostructure including a semiconductor layer with a varying composition

Controlling ultraviolet intensity over a surface of a light sensitive object

Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.

Group III nitride heterostructure for optoelectronic device

Plant growth with radiation-based mildew and/or bacteria control

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Columbia, SC, United States of America

Maxim S Shatalov