Freebird Semiconductor Corporation

Max Zafrani

Anthony G P Marini

James L Larrauri

Simon P Wainwright

Embodiments of the present disclosure relate to a multi-function circuit. The circuit comprises a low side circuit that is comprised with a first set of enhancement mode transistors. The half bridge circuit also includes a high side circuit that is comprised of a second set of transistors. Each of the enhancement mode transistors of the first set and second set of enhancement mode transistors are Gallium Nitride (GaN) transistors. In some embodiments, the GaN transistors are High Electron Mobility Transistors (HEMTs). In additional embodiments, the GaN transistors are configured and operated as saturated switches. In further embodiments, the half bridge circuit is designed as a discrete circuit. Additionally, each of the first set and second set of transistors, diodes, resistors, and all passive elements are discrete components arranged to form a half bridge circuit. In fact, the entire half bridge circuit is built from discrete components.

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Swampscott, MA, United States of America

Max Zafrani