Micron Technology Incorporated

Max S Vohra

Aaron Preston Boehm

Jeremy Chritz

Tamara Schmitz

David Hulton

Methods, systems, and devices for temperature change measurement to detect an attack on a memory device are described. A memory device may measure a rate of change for temperature readings at a dynamic random access memory (DRAM) component of the memory device (e.g., using sensors at the DRAM component). The memory device may compare the rate of change for the temperature to a threshold, for example, using circuitry, a threshold value stored in memory, or both. If the memory device determines that the rate of change for the temperature satisfies the threshold, the memory device may disable one or more features of the memory device to protect against a potential attack. For example, an attack on the memory device may be indicated by the change in temperature readings at the DRAM component, and the memory device may perform one or more protective measures based on detecting the temperature change.

Temperature change measurement to detect attack

Methods, systems, and devices for verification of a volatile memory, such as a dynamic random-access memory (DRAM), using a unique identifier (ID) are described. A memory device may store a unique ID for a DRAM component of the memory device in non-volatile memory (e.g., in the DRAM, external to the DRAM). A host device coupled with the memory device may store, to non-volatile memory at the host device, information for verifying the identity of the DRAM component, for example, based on the unique ID. The memory device and host device may perform a procedure for verification of the identity of the DRAM component using the unique ID of the DRAM and the verification information stored at the host device. If the host device detects that the DRAM has been replaced or modified based on the verification procedure, the host device may disable one or more features of the memory device.

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Max S Vohra