Taiwan Semiconductor Manufacturing Comp. Ltd.

All Gain Industry Co., Ltd.

Max Liu

Wei-Shuo Ho

Yen-Ming Peng

Wen-Chih Chiou

Weng-Jin Wu

Chao-Shun Hsu

Ya-Wen Tseng

The semiconductor structure includes a semiconductor substrate having a first region and a second region being adjacent to the first region; first fins formed on the semiconductor substrate within the first region; a first shallow trench isolation (STI) feature disposed on the semiconductor substrate within the second region; and a first gate stack that includes a first segment disposed directly on the first fins within the first region and a second segment extending to the first STI feature within the second region. The second segment of the first gate stack includes a low resistance metal (LRM) layer, a first tantalum titanium nitride layer, a titanium aluminum nitride layer, and a second tantalum titanium nitride layer stacked in sequence. The first segment of the first gate stack within the first region is free of the LRM layer.

Gate structure and method with enhanced gate contact and threshold voltage

A pipe connector has a tube and two binding rings. The tube is made from a soft material and forms at least one fixing segment on two ends. The two binding rings are mounted on the two ends of the tube respectively. Each binding ring has at least one locating segment. The amount of the at least one locating segment is equal to the amount of the at least one fixing segment of the tube. The at least one fixing segment engages with the at least one locating segment to fix the binding ring and the tube. Thus, a user only needs to expand the tube to mount the tube onto a water pipe instead of heating it. Alternatively, engaging the fixing segment with the locating segment prevents the binding ring from moving relatively to the tube.

Pipe connector with binding rings

Through substrate via barrier structures and methods are disclosed. In one embodiment, a semiconductor device includes a first substrate including an active device region disposed within isolation regions. A through substrate via is disposed adjacent to the active device region and within the first substrate. A buffer layer is disposed around at least a portion of the through substrate via, wherein the buffer layer is disposed between the isolation regions and the through substrate via.

Barrier structures and methods for through substrate vias

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Taipei, Taiwan

Max Liu