Messerschmitt-bolkow-blohm Gmbh

Daimler-benz Ag

Messerschmitt-boelkow-blohm Gesellschaft MIT Beschraenkter Haftung

Messerschmitt-bolkow-blohm Gesellschaft MIT Beschrankter Haftung

Max Koniger

Gerhard Winterling

Thorsteinn Halldorsson

Helmut Seidel

Peter Peuser

Walter Kroy

Reinhold Hilpert

Nikolaus Peter Schmitt

Peter Deimel

Florian Binder

Paul Zeller

Axel Mehnert

Gunter Reithmeier

Gerhard Muller

Eduard Dette

Alois Seilmeier

Heinrich Graener

Solid-state laser system for color picture projection

A micromechanical structure with cavities, containers, openings, canals, depressions, humps or the like for examinations of sample substances for possible changes of physical and/or chemical properties with targeted evaluation and documentation for the purposes of biotechnology, gene technology, cell and immune research and other medical, agricultural and environment research, where the structure consists of semiconducting material (of the group III to V of the elements of the periodic system) or contain the latter or glass or ceramic, diamond, or carbon and is made by a masking technique, especially by a chemical etching technique.

Micromechanical structure

A semiconductor device for converting light into electric energy comprises at least one layer of amorphous silicon with a surface thereof which is intended to be exposed to light covered by a cover layer of polycrystalline silicon. The use of the polycrystalline silicon increases the current yield in the blue light range of the solar spectrum. A method of producing such a semiconductor device is also disclosed.

Semiconductor device for converting light into electric energy

An infrared detector element of the Schottky-barrier type is constructed to have its sensitivity in the range of about 8 to 12 microns. For this purpose a silicon substrate (1) has a highly doped surface layer (3) of p.sup.+ -silicon with a doping density in the range of 5.times.10.sup.18 to 5.times.10.sup.19 (atoms per cm.sup.3) and a thickness in the range of 50 to 200 Angstroms. On top of this layer (3) a metal layer (2) for example of platinum is deposited and partially alloyed into layer (3) to form PtSi. Such elements are arranged in arrays and may be combined with other detector elements having their sensitivity in other spectrum ranges, e.g., 3 to 5 microns and/or in the visible spectrum range.

Opto-electrical device made of silicon for detecting infrared light

A method and device for manufacturing semiconductor elements of amorphous licon which convert light into electrical energy comprising, supplying a silicon compound to a vessel, passing an electric field through the vessel sufficient to produce a glow discharge having free electrons in the vessel to precipitate amorphous silicon from the silicon compound onto a substrate in the vessel, and providing a magnetic field in the vessel which is directed substantially transversely to the electric field and is of a magnitude sufficient to conduct the free electrons along closed paths over the surface of the substrate.

Method for manufacturing semiconductor elements from amorphous silicon

Growing community of inventors

Munich, Germany

Max Koniger