Wisconsin Alumni Research Foundation

The University of New Mexico

University of Utah Research Foundation

Universitaet Hamburg

University of Hamburg

Universitat Hamburg

Max G Lagally

Zhenqiang Ma

Francesca Cavallo

Abhishek Bhat

Paul Gregory Evans

Mark A Eriksson

Daniel Warren Van Der Weide

Robert H Blick

Hao-Chih Yuan

Bradley James Larson

Amit Lal

Chung Hoon Lee

Donald E Savage

Shelley Scott

Ferencz S Denes

Sorin Odisei Manolache

Guogong Wang

Clark S Ritz

Matthew McLean Dwyer

Paul Powell Rugheimer

Luis Emilio Cruz-Barba

Frank Steele Flack

Richard Rojas-Delgado

Michelle M Roberts

Steven H Walker

Robert Donald Lorenz

Thomas Francis Kuech

Feng Liu

Jung-Hun Seo

Mark Gregory Friesen

Robert Blick

Vijay Saradhi Mangu

Robert J Joynt

David M Barnes

Divya Prakash

Jason M Helgren

Finley Haines

Joe A Martin

Shiva Hajitabarmarznaki

Shelley S Scott

Mengistie Debasu

Emma J Renteria

Arnold Melvin Kiefer

Divya Jyoti Prakash

Martha M Vestling

Matt S Marcus

Todd R Narkis

Boy Tanto

Deborah M Paskiewicz

José Roberto Sänchez Pérez

Xiaorui Cui

Yingxin Guan

Paul Rugheimer

Shelley Ann Scott

An antenna comprising: input and output coaxial horn antennas coupled with a self-assembled helical slow-wave structure cradled in a groove in a silicon-on-insulator wafer.

Helical slow-wave structures with integrated couplers of THz radiation: devices and methods of fabrication

A semiconductor spintronic device is disclosed, which includes a substrate, a first ferromagnetic contact layer and a second ferromagnetic contact layer disposed on the substrate, and a semiconductor nanomembrane, disposed between the first ferromagnetic contact layer and the second ferromagnetic contact layer. The semiconductor spintronic device can include a screw dislocation throughout the thickness of the semiconductor nanomembrane layers. Methods of fabricating and operating a semiconductor spintronic device are also disclosed.

Vertical spintronic devices based on dislocations in single-crystalline semiconductors and methods for their production

Traveling-wave tube amplifiers for high-frequency signals, including terahertz signals, and methods for making a slow-wave structure for the traveling-wave tube amplifiers are provided. The slow-wave structures include helical conductors that are self-assembled via the release and relaxation of strained films from a sacrificial growth substrate.

Methods of making a self-assembled slow-wave structures

Provided is a process for manufacturing magnetically tunable nano-resonators. The nano-resonators comprise nanoparticles of a crystalline magnetic material embedded into cavities of a substrate.

Magnetically tunable resonator

Piezoelectrically actuated devices constructed from thin semiconductor membranes bonded directly to piezoelectric substrates are provided. Methods for fabricating these devices are also provided. The bonding of the semiconductor to the piezoelectric material does not require the use of any intermediate layers, such as bonding agents.

Integration of semiconductor membranes with piezoelectric substrates

Josephson junctions (JJ) based on bilayers of azimuthally misaligned two-dimensional materials having superconducting states are provided. Also provided are electronic devices and circuits incorporating the JJs as active components and methods of using the electronic devices and circuits. The JJs are formed from bilayers composed of azimuthally misaligned two-dimensional materials having a first superconducting segment and a second superconducting segment separated by a weak-link region that is integrated into the bilayer.

Superconducting bilayers of two-dimensional materials with integrated Josephson junctions

Traveling-wave tube amplifiers and methods for making slow-wave structures for the amplifiers are provided. The SWSs include helical conductors that are self-assembled via the release of stressed electrically conductive strips from a sacrificial material. The helical conductors can be electroplated post-self-assembly to fortify the helix, reduce losses, and tailor the dimensions and operating parameters of the helix.

Electroplated helical slow-wave structures for high-frequency signals

Traveling wave tube amplifier having a helical slow-wave structure supported by a cylindrical scaffold

Methods for fabricating thin, high-aspect-ratio Ge nanostructures from high-quality, single-crystalline Ge substrates are provided. Also provided are grating structures made using the methods. The methods utilize a thin layer of graphene between a surface of a Ge substrate, and an overlying resist layer. The graphene passivates the surface, preventing the formation of water-soluble native Ge oxides that can result in the lift-off of the resist during the development of the resist.

Arrays of high-aspect-ratio germanium nanostructures with nanoscale pitch and methods for the fabrication thereof

A self-assembling element fabricated using integrated circuit techniques may provide a small diameter helical conductor surrounding an electron beam for the construction of a vacuum electronic device such as a traveling-wave tube for terahertz scale signal.

High-frequency vacuum electronic device

A transducer supported by the eardrum provides a piezoelectric material exchanging energy with the eardrum through a nanoscale membrane, the latter serving to boost the coupling between the piezoelectric material and the eardrum.

Eardrum transducer with nanoscale membrane

High-quality, single-crystalline silicon-germanium (SiGe) having a high germanium content is provided. Layers of the high-quality, single-crystalline silicon-germanium can be grown to high sub-critical thicknesses and then released from their growth substrates to provide SiGefilms without lattice mismatch-induced misfit dislocations or a mosaic distribution of crystallographic orientations.

High-quality, single-crystalline silicon-germanium films

Tunable p-i-n diodes comprising Ge heterojunction structures are provided. Also provided are methods for making and using the tunable p-i-n diodes. Tunability is provided by adjusting the tensile strain in the p-i-n heterojunction structure, which enables the diodes to emit radiation over a range of wavelengths.

Strain tunable light emitting diodes with germanium P-I-N heterojunctions

Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a semiconductor substrate. The graphene layer and the substrate are separated by an interfacial region that promotes transfer of charge carriers from the surface of the substrate to the graphene.

Graphene-on-semiconductor substrates for analog electronics

The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or 'nanomembranes.'

Semiconductor nanowire thermoelectric materials and devices, and processes for producing same

Growing community of inventors

Madison, WI, United States of America

Max G Lagally