Stmicroelectronics S.r.l.

Other

Elpida Memory, Inc.

Skhynix Inc.

Mauro Pagliato

Paolo Rolandi

Massimo Montanaro

Marco Giovanni Fontana

Simone Bartoli

Giorgio Oddone

Giulio Martinozzi

Diego Della Mina

Davide Bitonti

Marino Laterza

Chiara De Berti

Francesco Pessina

Marco Spinelli

Disclosed is a latch architecture comprising an input circuit receiving input data and; a combinational network providing first intermediate data, first intermediate control signal and second intermediate control signal, based on latched input data from the input circuit; one or more first latches providing latched first intermediate data; a second latch providing a latched first intermediate control signal; a third latch providing a latched second intermediate control signal; and at least one fourth latch providing the output data; a decoder connected to the first latch and receiving the latched first intermediate data and providing second intermediate data. The at least one fourth latch receives input signals modified based on the latched first intermediate control signal, the latched second intermediate control signal and the second intermediate data. The first to third latches operate at an inverted clock signal and the at least one fourth latch operates at a non-inverted clock signal.

Latch architecture

A device includes a nonvolatile memory array, a Static Random Access Memory (SRAM) array including a plurality of bit lines, including first and second bit lines paired with each other, and a pad. A first circuit is coupled between the nonvolatile memory array and the first and second bit lines, and interfaces with the SRAM array. A second circuit is coupled between the pad and the first and second bit lines, and interfaces with the SRAM array. A control circuit performs a first operation to access the nonvolatile memory array via the SRAM array and the first and second circuits and performs a second operation by producing an electrical path connecting from the pad to the nonvolatile memory array through at least one of the first and second bit lines of the SRAM array without intervening at least one of the first and second circuits.

DMA architecture for NAND-type flash memory

Disclosed herein is a device that includes a plurality of first word lines each extending from an associated one of the first terminals in a second direction toward to the second terminals and terminating between the first and second terminals, the second direction being substantially perpendicular to the first direction, and a plurality of second word lines each extending from an associated one of the second terminals in a third direction toward to the first terminals and terminating near to an end of an associated one of the first word lines, the third direction being opposite to the second direction, each of the second word lines being substantially aligned with an associated one of the first word lines.

Memory device in particular extra array configured therein for configuration and redundancy information

Disclosed herein is a device that comprises a SRAM cell, a pair of bit-lines coupled with the SRAM cell, a writing circuit producing at first and second output nodes thereof true and complementary data signals responsive to data to be written, a first pass transistor coupled between one of the pair of the bit-lines and the first output node of the writing circuit, a second pass transistor coupled between the other of the pair of bit lines and the second output node of the writing circuit; and a mask-write circuit configured to render both of the first and second pass transistors conductive in a write operation and render selected one or ones of first and second pass transistors non-conductive in a write-mask operation.

Mask-write apparatus for a SRAM cell

A high voltage generator of the DAC-controlled type, has an input terminal connected to a first voltage reference and an output terminal providing an output voltage and comprises at least a voltage control circuit and a charge pump circuit inserted, in series to each other, between the input and output terminals of the high voltage generator, and an output regulator connected to the output terminal of the high voltage generator and comprising at least a digital-to-analog converter or DAC. The output regulator further comprises at least an additional current regulation portion connected to the output terminal of the high voltage generator through a first resistive element of the output regulator as well to an enabling terminal which provides an enabling signal, the additional current regulation portion being supplied by a second voltage reference having a voltage level higher than a voltage level of the first voltage reference.

High voltage generator of the DAC-controlled type

A sense amplifier is provided that includes a measure branch receiving an input current to be detected, a reference branch receiving a reference current, and an equalizing circuit including a comparator. The equalizing circuit selectively equalizes a measure node of the measure branch with a reference node of the reference branch, and the comparator compares a voltage at the measure node of the measure branch with a voltage at the reference node of the reference branch. The equalizing circuit is such that, when activated, equalization of the measure node with the reference node is virtual and substantially does not involve a flow of current between the measure node and the reference node of the reference branch. The sense amplifier is particularly suited for reading memory cells of a semiconductor memory. Also provided is a method for sensing an input current.

Sense amplifier with equalizer

A parallel sense amplifier includes a measuring branch for receiving an input current to be measured, a plurality of reference branches each one for receiving a reference current, and a plurality of comparators each one for comparing a voltage at a measuring node along the measuring branch with a voltage at a reference node along a corresponding reference branch; the amplifier further includes a multiple current mirror for mirroring the input current into each reference branch.

Parallel sense amplifier with mirroring of the current to be measured into each reference branch

Described herein is an asynchronous serial dichotomic sense amplifier comprising a first comparator stage having a first input receiving the cell current flowing in the multilevel memory cell, the content of which is to be read, a second input receiving a first reference current, and an output supplying the first of the bits stored in the multilevel memory cell; a multiplexer stage having a selection input connected to the output of the first comparator stage, a first signal input receiving a second reference current, a second signal input receiving a third reference current, and a signal output selectively connectable to the first or the second signal input depending on the logic level present on the selection input; and a second comparator stage having a first input receiving the cell current, a second input connected to the signal output of the multiplexer stage, and an output supplying the second of the bits stored in the multilevel memory cell.

Reading circuit and method for a multilevel non-volatile memory

The voltage applied to the gate terminals of the charging transistors and charge-transfer transistors of two parallel pumping branches forming a charge pump is a boosted voltage generated internally and supplied in a crosswise manner. In particular, for driving the charge pump, first and second driving signals are generated respectively for the first and for the second pumping branch via a first and respectively a second driving circuit; the first and second driving signals are also supplied respectively to a first and to a second auxiliary charge pump to obtain respectively first and second voltage-boosted signals; and the first and second boosted voltages are respectively supplied to the second and to the first driving circuit.

Growing community of inventors

Bollate, Italy

Mauro Pagliato