Lpe S.p.a.

Denso Corporation

Maurilio Meschia

Silvio Preti

Francesco Corea

Danilo Crippa

Yuichiro Tokuda

The reaction chamber (A) is used for a reactor for the deposition of semiconductor material on a substrate (); it extends in a longitudinal direction and comprises a reaction and deposition zone () which extends in the longitudinal direction; this zone () is defined by susceptor elements (A,B,C,A,B,) adapted to be heated by electromagnetic induction; a first susceptor element (A,B,C,A,B) is opposite to a substrate support element () of the chamber and has a hole () which extends in the longitudinal direction along its whole length; the first susceptor element (A,B,C,A,B) has a non-uniform cross section that depends on its longitudinal position.

Reaction chamber for an epitaxial reactor of semiconductor material with non-uniform longitudinal section and reactor

The reaction chamber () is designed for a reactor () for deposition of layers of semiconductor material on substrates; it comprises a tube () and an injector () and a holder (); the tube () is made of quartz and has a cylindrical or prismatic shape and surrounds a reaction and deposition zone; the injector () is arranged to inject precursor gases into the reaction and deposition zone; the holder () is arranged to support a substrate in the reaction and deposition zone during deposition processes; graphite susceptor elements () are located inside the tube () for heating the reaction and deposition zone and components inside the reaction and deposition zone; an inductor system () is located outside the tube () for providing energy to the susceptor elements () by electromagnetic induction; a rotating element () in the form of a cylindrical or prismatic tube is located inside the reaction and deposition zone and surrounds the injector ().

Reaction chamber comprising a rotating element for the deposition of a semiconductor material

The reaction chamber () is used for a deposition reactor of layers of semiconductor material on substrates; it comprises a tube () made of quartz and having a cylindrical shape and adapted to be positioned in use so that its axis () is vertical; the tube () has a cylindrical inner interspace () which extends along the entire length of the tube () and which is adapted to accommodate a flowing liquid; the chamber () further comprises an annular closing element () made of quartz and fixed to a first lower end of the tube () so as to close the interspace () preventing the liquid from flowing out of the interspace at the bottom; at the top, the closing element () has an annular recess () facing the interspace () so that the flowing liquid can reach the recess () at the bottom; the chamber () further comprises a set of internal conduits () internal to the interspace (), wherein said internal conduits () extend from the first lower region of the tube () till a second upper region of the tube () to facilitate circulation of the flowing liquid in the interspace ().

Reaction chamber for a deposition reactor with interspace and lower closing element and reactor

The device () is for supporting substrates in a reaction chamber of an epitaxial reactor; it comprises: a disc-shaped element () having a first face (A) adapted to be upperly positioned when the device () is being used and a second face (B) adapted to be lowerly positioned when the device () is being used, said disc-shaped element () being adapted to receive a gas flow (F) to rotate the device () about an axis (X) thereof, a substrate-supporting element () in a single piece with said disc-shaped element () and preferably adjacent to said first face (A), and a shaft () coaxial to said disc-shaped element (), in a single piece with said disc-shaped element () and having a first end (A) at said second face (B); said shaft () has at a second end (B) thereof at least a protrusion (A,B,C) whose rotation is adapted to be detected by a pyrometer () or a thermographic camera.

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Baranzate, Italy

Maurilio Meschia