Universitá Degli Studi Di Milano-Bicocca

Voltasolar S.r.l.

Maurilio Giuseppe Meschia

Simona Olga Binetti

Maurizio Filippo Acciarri

Leonida Miglio

Raffaele Moneta

Bruno Vodopivec

Stefano Marchionna

The present invention relates to novel molecules suitable to the use in the separation/removal of carbon dioxide from gaseous mixtures as liquid-phase carbon dioxide absorbers and suitable to allow the subsequent release of the absorbed carbon dioxide in form of different ionic liquids, preferentially a glycine salt with choline hexanoate, ester between glycine and hexanoic alcohol (hexyl glycinate) and glycerol ester with glycine and hexanoic acid. The present invention also relates to a method and a plant for the capture of carbon dioxide from gaseous mixtures by using an absorber for carbon dioxide in liquid phase with a heating jacket.

Compounds for the capture of carbon dioxide from gaseous mixtures and subsequent release, related process and plant

The plant is suitable to produce a semiconductor film () having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16 of the periodic classification of elements. The plant comprises an outer case () embedding a chamber () divided into one deposition zone () and one evaporation zone (), which are separated by a screen () interrupted by at least one cylindrical transfer member provided with actuation means rotating about its axis (). To the deposition zone () a magnetron device () is associated, for the deposition by sputtering of at least one element for each of the groups 11 and 13 on the side surface (&#x3b1;) of the cylindrical member that is in the deposition zone (). To the evaporation zone () a cell () for the evaporation of at least one element of the group 16 is associated, and such an evaporation zone () houses a substrate () on which the film () is produced. The cylindrical member () is provided with heating means of a portion of the side surface thereof that is from time to time in the evaporation zone (), so that the elements of the groups 11 and 13 previously deposited on this surface evaporate and deposit on the substrate () together with the at least one element of the group 16 forming the film ().

Plant and method for producing a semiconductor film

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Asti, Italy

Maurilio Giuseppe Meschia