US Government As Represented by the Secretary of the Army

USA As Represented by Secretary of the Navy

Maurice Weiner

Anderson H Kim

Robert J Youmans

Louis J Jasper, Jr

Lawrence J Bovino

Robert J Zeto

Terence Burke

Lawrence E Kingsley

Thomas E Koscica

Stephen Levy

Hardev Singh

Leo D Didomenico

Robert A Lux

James F Harvey

Robert A Pastore, Jr

John L Carter

Jian H Zhao

Melvin J Wade

Stephen E Saddow

William R Donaldson

William H Wright, Jr

Clarence G Thornton

Michelle A Dornath-Mohr

William Beattie

Joseph C O'Connell

A pulse signal generator apparatus for producing an ultrafast, high-voltage pulser using a circumferentially illuminated, laser-switched radial transmission line transformer. The apparatus includes a radial transmission line transformer having a circular plate structure which can be coupled to a voltage source that becomes conductive upon the application thereto of a predetermined type of light energy. A laser switching device which is integral with the radial transmission line transformer and surrounds the circular plate structure, operates to switch an input electrical pulse of a predetermined peak voltage, injected at a circumferential edge of the circular plate structure onto a peripheral surface of the circular plate structure, to produce an output electrical pulse having a substantially higher peak voltage than the predetermined peak voltage of the input electrical pulse, at a center of the circular plate structure of the transmission line transformer. The apparatus also includes a laser for producing the predetermined type of light energy which illuminates the laser switching device.

Ultrafast, high voltage pulser using circumferentially illuminated,

A photon triggered RF radiator having separate sections to perform the eny storage and the energy radiation functions. The energy storage function is performed by at least one charging electrode positioned on the upper surface of a photoconductive dielectric substrate, whereas the energy radiation function is performed by a charging electrode positioned adjacent to the charging electrode on the upper surface of the substrate. The charging electrode and the radiating electrode are separated by a predetermined gap distance that is large enough to insure there is no surface flashover between the electrodes and small enough to insure the efficiency of energy discharge from the charging pad to the spiral antenna is maximized.

Photon-triggered RF radiator having discrete energy storage and energy

A device for radiating pulses of radio frequency energy in response to pulses of laser light in which a metal layer is ohmically bonded to one side of a substrate of semiconductor material and an antenna is ohmically bonded to the other side of the substrate, there being at least one aperture in the metal layer for permitting laser light to reach the disk.

Optically activated multi-frequency high power RF generation utilizing a

A monolithic photoconductive pulsar utilizing a radial transmission line structure to store energy and a unique optical pulse illumination means to trigger the radial transmission line to radiate extremely, high voltage gain, narrow bipolar pulses. By achieving a higher voltage gain, the bipolar RF pulses are desirable in that they substantially improve the efficiency and lifetime of the device over the prior art.

Monolithic photoconductive bipolar pulsar utilizing a radial

A photoconductive switch coupled to an energy storage device wherein the tch is comprised of photoconductive semiconductor material while the energy storage device comprises two spiral metalized arms that make up a spiral antenna. The photoconductive switch is electrically connected to the storage device to facilitate fast discharge of the stored energy through a load. A variation comprises a storage device comprising two separate pieces of substrate material each having a spiral metalized arm. The separate pieces being connected by highly dielectric material to form a spiral antenna ultra wideband radiator.

Ultra-wideband high power photon triggered frequency independent

A photoconductive ultra-wideband impulse generating device utilizing pulse harpening techniques to further increase its radiation frequency well above the gigahertz range while also substantially improving radiation efficiency. Such pulse sharpening provides for a radiator having a wider range of applications.

Pulse sharpening using an optical pulse

An electronically controlled frequency agile impulse source utilizing pulse sharpening techniques to increase its versatility in radiating impulse energy at a variety of center frequencies and bandwidths in the megahertz to the gigahertz range. Such pulse sharpening provides for a radiator having a wider range of applications.

Electronically controlled frequency agile impulse device

The present invention comprises a semi-insulating layer of GaAs with p+ and layers of aluminum gallium arsenide AlGaAs grown on one side of the semi-insulating GaAs and with p and n+ layers of AlGaAs grown on the other side of the semi-insulating GaAs. Ohmic contacts are grown on both sides of the thyristor as well as low temperature GaAs to provide for surface passivity.

AlGaAs/GaAs thyristor

A photoconductive switch coupled to an energy storage device wherein the tch is comprised of photoconductive semiconductor material while the energy storage device comprises two discrete dielectric mediums. Each medium having a conductive electrode on the top and bottom surfaces to essentially form parallel capacitors wherein the parallel capacitors are separated by a predetermined gap distance. A photoconductive switch electrically connected to each medium such that the switches are located on the opposite sides of their respective mediums. The predetermined gap distance (between the electrodes) and the photoconductive switches (on opposite sides of the storage devices) provide suppression of surface flashover between very high voltage, charged electrodes. Such flashover suppression allowing for very high power pulse generation.

High power photon triggered ultra-wideband RF radiator with opposite

The combination of a photoconductive switch coupled to an energy storage ice wherein the switch is comprised of photoconductive semiconductor switch while the energy storage device comprises a tapered radio transmission line. A photoconductive semiconductor gallium arsenide switch is embedded in a circular disc of dielectric material having a thickness dimension which reduces linearly outward from the center, with upper and lower layers of continuous radial metallization configured in a circular pattern located thereon. The upper layer of metallization includes an apertured grid adjacent one surface of the switch, while the outer conductor of a coaxial output signal line is connected to the metallization layer on the opposite side with the inner conductor thereof passing through the dielectric layer to the undersurface of the semiconductor switch.

Tapered radial transmission line for an optically activated hybrid pulser

Bulk gallium arsenide having a high hold-off voltage is optically activated by a laser resulting in high power output. A high voltage input is applied to a semi-insulating gallium arsenide material. The gallium arsenide material is activated by laser light, thereby resulting in large current conduction. An external oscillating signal is superimposed on the high current resulting in a high power output.

Signal amplification using optically activated bulk semi-insulating GaAs

A device for generating pulses of radio frequency energy in response to pulses of laser light in which a circular wafer of GaAs has metallized annular layers ohmically bonded to the wafer by epitaxial GaAs layers, and an epitaxial layer of AlGaAs in the center of one of the annular epitaxial layers through which laser light is to be directed, there being a plurality of apertures in the metallized layer in contact with the AlGaAs epitaxial layer. In addition, an AlGaAs epitaxial layer may be formed opposite the first AlGaAs layer and an optical fiber is brought into contact with it so that laser light can be introduced at both sides of the wafer.

Optically activated wafer-scale pulser with AlGaAs epitaxial layer

The present invention describes a method of explosively vaporizing a piece f semiconductor material in a plasma formed by a fast, high voltage current pulse. The semiconductor material may be formed from crystalline, polycrystalline, or amorphous forms of semiconductor material. After the semiconductor material is vaporized, it coalesces as the plasma begins to cool and is deposited in a collection system. The size and composition of the microparticles formed by this process can be controlled by conditioning the plasma in predetermined manners. In particular, impurities can be introduced either in the target material, in gas introduced in the plasma, or in the gas through which the coalescing microparticles travel prior to deposition.

Fabrication technique for silicon microclusters using pulsed electrical

A photoconductive switch coupled to an energy storage device wherein the tch is comprised of photoconductive semiconductor material while the energy storage device comprises two quasi-radial transmission line including a different material, i.e. a dielectric storage medium. The photoconductive semiconductor gallium arsenide switch is electrically connected to two quasi-radial transmission lines formed in part by layers of metallization configured in a quasi-radially shaped pattern upon the energy storage device. A variation comprises a photoconductive semiconductor gallium arsenide wafer sandwiched between two quasi-radial transmission lines so that the semiconductor gallium arsenide wafer serves as substrate, energy storage medium, and photoconductive switch.

Ultra-wideband high power photon triggered frequency independent radiator

A high voltage sub-nanosecond pulser and radiator including a radial transsion line consisting of a dielectric member sandwiched between two patterned layers of metallization, one of which comprises a plurality of radiating elements. A photoconductive semiconductor gallium arsenide switch is embedded in the dielectric member which has a constant thickness. The other layer of metallization includes an apertured grid adjacent one surface of the switch for application of an energization pulse of laser light.

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Ocean, NJ, United States of America

Maurice Weiner