Asml Netherlands B.v.

Maurice Henricus Franciscus Janssen

Jan Bernard Plechelmus Van Schoot

Hans Van Der Laan

Antoine Gaston Marie Kiers

Koen Van Ingen Schenau

Peter Clement Paul Vanoppen

Arend Johannes Donkerbroek

Yassin Chowdhury

Rene Hubert Jacobus Carpaij

A lithographic apparatus including a projection system having an optical axis and configured to project a radiation beam. The apparatus includes a measurement unit arranged to measure the radiation beam projected by the projection system, the measurement unit having an opening through which the radiation beam passes in use, and a sensing surface extending transverse to the optical axis and arranged to measure the radiation beam passing through the opening. The apparatus is configured to move the sensing surface in a plane transverse to the optical axis between a plurality of measurement positions. The radiation beam defines a view in the plane, and the measurement unit is configured such that the sensing surface captures, in each measurement position, a portion of the view smaller than 100% of the view.

Method and lithograph apparatus for measuring a radiation beam

A lithographic apparatus includes an illuminator configured to condition a beam of radiation and a support configured to hold a patterning device. The patterning device is configured to pattern the beam of radiation according to a desired pattern. The lithographic apparatus also includes a substrate table configured to hold a substrate and a projection system configured to project the patterned beam onto a target portion of the substrate to form a patterned image on the substrate. The apparatus further includes a sensor configured and arranged to intercept a portion of the beam and to measure a transmission of the beam through at least a portion of the patterning device.

Method for predicting a critical dimension of a feature imaged by a lithographic apparatus

A lithographic apparatus comprises an illumination system for providing a projection beam of radiation and a support structure for supporting a patterning device which impart the projection beam with a pattern in its cross-section. The patterning device has a non-flat critical dimension (CD) profile across its width. A projection system projects the patterned beam onto a target portion of a substrate. Dose variation device for varying the radiation dose across the width of the target portion compensates for the non-flat CD profile of the patterning device.

Lithographic apparatus and device manufacturing method

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Eindhoven, Netherlands

Maurice Henricus Franciscus Janssen