Thomson-csf

Maurice Gloanec

Gerard Nuzillat

Georges Bert

Ernesto Perea

Rene Castagne

Michel Charrier

Vincent Maurel

Michel Peltier

A bistable logic device, of the RSTT type, operating up to X band. The bistable logic device is organized into three stages: an input stage of four NOR operators (21, 31, 41, 51), a second stage of two OR operators (61, 71) and an output stage of two OR operators (62, 72). Each NOR operator of the input stage drives in parallel an OR operator of the second stage and an OR operator of the output stage. Each of the four OR operators are fed back to an input of one of the four NOR operators of the input stage. The organization in logic NOR/OR form makes it possible to use faster single gate transistors. The present invention may be particularly useful to frequency dividers for interfacing between signals at GHz frequency and measurement and control circuits at MHz frequency.

Bistable logic device, operating from DC to 10 GHz, and frequency

Device for regenerating digital signals transmitted along a coaxial line. So as to transmit information at flow rates greater than or equal to 650 Mbauds, the storage comparator of the invention is constructed in the form of an integrated circuit on AsGa and with negative threshold voltage MESFET transistors. It comprises an adjustable threshold voltage comparator stage, a type-D flip-flop for storage and resynchronization with respect to an external clock, and an output matching stage which may provide summation at its output.

Storage comparator, for regenerating digital electric signals and

A Gunn-effect device originated from a Gunn-triode wherein electrodes are added between gate and anode for receiving high and low potentials representing states 1 and 0 of a binary code. In a normal Gunn-triode a very short pulse on the gate produces a dipole domain which is propagated to the anode within a time of the order of the nanosecond. In the present device, under each finger brought temporarily to a low potential, there is produced a space charge which induces a negative pulse in the anode current of the Gunn device upon the passage of a dipole domain under the finger. Consequently, a series of successive pulses corresponds to a combination of simultaneous binary states. A digital converter using this device is proposed for converting simultaneous binary signals into successive binary signals.

Gunn-effect device modulatable by coded pulses, and a parallel-series

A device derived from a bulk semiconductor component called 'Gunn-effect triode'; utilizing the propagation of travelling domains between gate and anode of said triode. Forming a register element with such a device consists of a 'writing arm' with a semiconductor band of Ga As organized into a Gunn-effect triode and a 'reading arm' which is a similar band of Ga As having two electrodes instead of three i.e. an anode and a cathode. The two bands are connected by a bridge of Ga As. The travelling domain triggered by a digital signal is propagated by a lateral extension across the bridge from the writing arm to the reading arm. An n-bit register is carried out by arranging a series of register elements in such a manner that the gate of the first band of the first element forms the input terminal of the register and the cathode of the second band of the first element is connected to the gate of the first band of the second element and so on up to the second band of the n.sup.th element that is the output terminal of the register.

Growing community of inventors

Paris, France

Maurice Gloanec