Applied Materials, Inc.

Maurice E Ewert

Anantha K Subramani

Tza-Jing Gung

Joseph Michael Ranish

Keith A Miller

Umesh M Kelkar

Vincent E Burkhart

Hong Sheng Yang

Chandrasekhar Balasubramanyam

Ashish Goel

Xianmin Tang

Rongjun Wang

Zhendong Liu

In one embodiment, an adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the second annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less.

Cooled reflective adapter plate for a deposition chamber

In one embodiment, an adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the first annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less.

Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

Off-angled heating of the underside of a substrate using a lamp assembly

In a plasma-enhanced physical vapor deposition reactor, uniformity of radial distribution of the deposition rate across the workpiece is enhanced by applying both RF and D.C. power to the target and adjusting the power levels of the RF and D.C. power independently. Further optimization is obtained by adjusting the height of the magnet above the target, adjusting the radius of the orbital motion of the magnet above the target and providing an angle edge surface of the target.

Method for ultra-uniform sputter deposition using simultaneous RF and DC power on target

A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.

Mechanism for continuously varying radial position of a magnetron

Magnetron having continuously variable radial position

A dual-position magnetron that is rotated about a central axis in back of a sputtering target, particularly for sputtering an edge of a target of a barrier material onto a wafer and cleaning material redeposited at a center of the target. During target cleaning, wafer bias is reduced. In one embodiment, an arc-shaped magnetron is supported on a pivot arm pivoting on the end of a bracket fixed to the rotary shaft. A spring biases the pivot arm such that the magnetron is urged towards and overlies the target center. Centrifugal force at increased rotation rate overcomes the spring bias and shift the magnetron to an outer position with the long magnetron dimension aligned with the target edge. Mechanical stops prevent excessive movement in either direction. Other mechanisms include linear slides and actuators.

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San Jose, CA, United States of America

Maurice E Ewert