Skyworks Solutions, Inc.

Maureen Rosenberg Brongo

David Scott Whitefield

Aniruddha B Joshi

Tzung-Yin Lee

A transistor device includes a plurality of drain fingers that are elongate in a first dimension, a plurality of source fingers that are elongate in the first dimension and interleaved with the plurality of drain fingers, one or more drain contact bars extending over a first set of the plurality of drain fingers and a first set of the plurality of source fingers in a second dimension that is orthogonal to the first dimension, and one or more source contact bars extending over a second set of the plurality of drain fingers and a second set of the plurality of source fingers in the second dimension.

Orthogonal transistor layouts

A radio-frequency (RF) device includes a semiconductor substrate, a first field-effect transistor (FET) disposed on the substrate, the first FET having a first plurality of drain fingers, and a second FET connected in series with the first FET along a first dimension, the second FET having a second plurality of drain fingers that extent in a second dimension that is orthogonal with respect to the first dimension.

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Ladera Ranch, CA, United States of America

Maureen Rosenberg Brongo