Sychip Inc.

Maureen Lau

Yinon Degani

King Lien Tai

Kunquan Sun

Charley Chunlei Gao

Liguo Sun

Yu Fan

The specification describes an integrated passive device (IPD) that is formed on a silicon substrate covered with an oxide layer. Unwanted accumulated charge at the silicon/oxide interface are rendered immobile by creating trapping centers in the silicon surface. The trapping centers are produced by a polysilicon layer interposed between the silicon substrate and the oxide layer.

Integrated passive device substrates

The specification describes an integrated passive device (IPD) that is formed on a polysilicon substrate. A method for making the IPD is disclosed wherein the polysilicon substrate is produced starting with a single crystal handle wafer, depositing a thick substrate layer of polysilicon on one or both sides of the starting wafer, forming the IPD on one of the polysilicon substrate layers, and removing the handle wafer. In a preferred embodiment the single crystal silicon handle wafer is a silicon wafer rejected from a single crystal silicon wafer production line.

Integrated passive devices

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Warren, NJ, United States of America

Maureen Lau