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Gte Laboratories Incorporated

Maureen A Sullivan

Elizabeth A Himelson

Emel S Bulat

Method of fabricating a junction field effect transistor employing self-alignment techniques. The active regions of the device are defined by a relatively thin thermally-grown isolating silicon oxide layer at the surface of a silicon body. After the active source and gate regions of the device as defined by the thermally-grown isolatign silicon oxide are formed in the silicon, a layer of deposited silicon oxide is formed over the thermally-grown silicon oxide. This method provides a thick dielectric layer as well as control of the horizontal dimensions of the source and gate contacts.

Method of fabricating field effect transistors

A U-turn signaling attachment useful with the turn signal stalk of a motor vehicle includes a frame conformed for engagement to the stalk and a lever pivoted on one end of the frame. A cam edge is fixed to the lever to oppose one end of a push rod which, at its other end, oppposes a double lobed surface attached to the steering column. The cam edge, at its center position, is chamfered transversely to clear the push rod during fore and aft motion.

U-turn signal device

An aftermarket signaling system for use in an automobile including one, or more, manually powered ultrasonic sending units and an ultrasonic receiver which may be adhesively mounted in the automobile. The receiver includes a solar panel for recharging its own power supply and a set of lighted displays which are enabled by the ultrasonic signals from the sending units. The receiver may be mounted at the rear window of the vehicle and will thus provide visual signals to the following traffic.

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Mission Viejo, CA, United States of America

Maureen A Sullivan