Carl Zeiss Smt Gmbh

Matus Kalisky

Lars Stoppe

Hartmut Enkisch

Matthias Manger

Christoph Husemann

Oliver Dier

Thomas Schicketanz

Kerstin Hild

A method and an apparatus for beam analysis in an optical system are disclosed, wherein a plurality of beam parameters of a beam propagating along an optical axis are ascertained. The method includes: splitting the beam into a plurality of partial beams which have a focus offset in the longitudinal direction in relation to the optical axis; recording a measurement image produced by these partial beams; carrying out a forward simulation of the beam in the optical system on the basis of estimated initial values for the beam parameters in order to obtain a simulated image; and calculating a set of values for the beam parameters on the basis of the comparison between the simulated image and the measurement image.

Method and device for beam analysis

An optical system, in particular for a microlithographic projection exposure apparatus, with at least one mirror () which has an optically effective surface and, for electromagnetic radiation of a predefined operating wavelength impinging on the optically effective surface at an angle of incidence of at least 65&#xb0; relative to the respective surface normal, has a reflectivity of at least 0.5. The mirror has a reflection layer () and a compensation layer () which is arranged above this reflection layer () in the direction of the optically effective surface. The compensation layer (), for an intensity distribution generated in a pupil plane or a field plane of the optical system during operation thereof, reduces the difference between the maximum and the minimum intensity value by at least 20% compared to an analogous structure without the compensation layer.

Optical system, in particular for a microlithographic projection exposure apparatus

A mirror, in particular for a microlithographic projection exposure apparatus, has an optically effective surface, a mirror substrate (), a reflection layer (), which is configured to provide the mirror with a reflectivity of at least 50% for electromagnetic radiation with a predetermined operating wavelength incident on the optically effective surface () at angles of incidence in relation to the respective surface normals of at least 65&#xb0;, and a substrate protection layer () which is arranged between the mirror substrate () and the reflection layer (). The substrate protection layer has a transmission of less than 0.1% for EUV radiation.

Mirror, in particular for a microlithographic projection exposure apparatus

Growing community of inventors

Aalen, Germany

Matus Kalisky