Thales

Matthieu Le Baillif

Afshin Ziaei

Shailendra Bansropun

Richard Lebourgeois

Romain Czarny

Michel Giraudo

Paolo Martins

Marie-Pierre Dussauby

Gilles Neveu

William Rebernak

According to one aspect of the invention, there is proposed a capacitive radiofrequency MicroElectroMechanical System or capacitive RF MEMS comprising a metallic membrane suspended above an RF transmission line and resting on ground planes, and exhibiting a lower face, an upper face opposite to the lower face and a first layer comprising a refractory metallic material at least partially covering the upper face of the membrane so as to prevent the heating of the membrane.

Capacitive RF MEMS intended for high-power applications

A passive radiofrequency microelectronic components for an integrated circuit which includes a dielectric substrate and at least one metal conductive layer positioned on said substrate. The conductive layer including at least one first metal conductive portion and a second metal conductive portion separated by an insulation. A microelectronic component according to the invention includes at least one graphene layer positioned so that a radiofrequency or hyperfrequency signal crosses said at least one graphene layer when it is transmitted between said first metal conductive portion and said second metal conductive portion, said graphene layer being able, when it is subject to an electric potential, to transmit said radiofrequency or hyperfrequency signal along a first direction and to attenuate said radiofrequency or hyperfrequency signal along a second direction opposite to said first direction.

Passive microelectronic components, capable of allowing a radio-frequency or hyper-frequency signal to travel in a single direction

Methods of fabrication of electronic modules comprise, on the one hand, power electronic components fabricated on a substrate made of gallium nitride (GaN) and, on the other hand, micro-switches using electrostatic activation of the MEMS (Micro Electro Mechanical System) type. The electronic components and the micro-switches are fabricated on a single gallium nitride substrate and the fabrication method comprises at least the following steps: fabrication of the power components on the gallium nitride substrate; deposition of a first common passivation layer on said components and on the substrate; fabrication of the micro-switches on said substrate.

Method for integrating MEMS microswitches on GaN substrates comprising electronic power components

The invention relates to an electrostatic actuation micro-switch of capacitor type composed of two plates, the first of which is a flexible membrane and the second of which comprises at least one control electrode, the two plates being separated by a thickness of vacuum or gas and at least one layer of at least one electrical insulating material situated on the control electrode characterized in that it furthermore comprises a charge drain consisting of oriented conducting nanotubes on the surface of the said electrode, the said drain being overlaid with the said layer of electrical insulating material. The subject of the invention is also a method for fabricating the micro-switch according to the invention.

Capacitive micro-switch comprising a charge drain based on oriented nanotubes on the bottom electrode and method of fabrication

The invention relates to an RF circulator device with n ports allowing an RF signal to circulate in a single direction, where the circulator has at least three ports, an input port for receiving a radio frequency signal to be transmitted to a second port designed to be connected to an antenna port, an output port capable of being connected to a receiving device or a load, comprising a first and a second microswitches each comprising two armatures of which the first is a flexible membrane and the second comprises at least one zone of a signal line, both armatures being separated by a thickness of void or of gas, the device making it possible to connect the main line to ground planes by self-actuation of the membrane under the effect of an input signal power.

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Orsay, France

Matthieu Le Baillif