Nxp USA, Inc.

Matthieu Lagouge

Qing Zhang

Mohommad Choudhuri

Gul Zeb

Mamur Chowdhury

A semiconductor device composed of a through-substrate-via (TSV) interconnect, and methods for forming the interconnect.

Method of integrating a copper plating process in a through-substrate-via (TSV) on CMOS wafer

A device includes vertically and laterally spaced sensors that sense different physical stimuli. Fabrication of the device entails forming a device structure having a first and second wafer layers with a signal routing layer interposed between them. Active transducer elements of one or more sensors are formed in the first wafer layer and a third wafer layer is attached with the second wafer layer to produce one or more cavities in which the active transducer elements are located. A trench extends through the second wafer and through a portion of the signal routing layer. The trench electrically isolates a region of the second wafer layer surrounded by the trench from a remainder of the second wafer layer. Another active transducer element of another sensor is formed in this region. The transducer element formed in the second wafer layer may be a diaphragm for a pressure sensor of the sensor device.

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Brossard, Canada

Matthieu Lagouge