Csem Centre Suisse D'electronique Et De Microtechnique Sa&#x2014;recherche Et D&#xe9;veloppement

Other

Ecole Polytechnique Federale De Lausanne

Csem Centre Suisse D'electronique Et De Microtechnique Sa

Meyer Burger Ag

Matthieu Despeisse

Christophe Ballif

Brett Akira Kamino

Hengyu Li

Nicolas Badel

Antonin Faes

Peter Cuony

Gaetano Parascandolo

Björn Niesen

Yu Yao

Jonas Geissbühler

Bertrand Paviet-salomon

Bertrand Paviet-Salomon

Andrea Tomasi

Jonathan Champliaud

Gaëlle Andreatta

Thomas SÖDERSTRÖM

Seda Beyer

Benedicte Line Bonnet-Eymard

Method of manufacturing a single-side-contacted photovoltaic device (), comprising the steps of: a) providing a photovoltaically-active substrate () defining a plurality of alternating hole collecting zones () and electron collecting zones () arranged in parallel strips; b) depositing a conductive layer () across said zones; c) depositing at least one conductive track () extending along at least part of each of said zones (); d) selectively forming a dielectric layer () on each of said zones (), so as to leave an exposed area free of dielectric at an interface between adjacent zones (); e) etching said conductive layer () in said exposed areas; f) applying a plurality of interconnecting conductors () so as to electrically interconnect at least a portion of said hole collecting zones () with each other, and to electrically interconnect at least a portion of said electron collecting zones () with each other.

Method of manufacturing a photovoltaic device

Photovoltaic module comprising a plurality of multijunction photovoltaic cells, at least one of said multijunction photovoltaic cells comprising:

Photovoltaic module

A photovoltaic device is proposed comprising a silicon-based substrate () having a p-type or n-type doping, with an intrinsic buffer layer () situated on said substrate. A first silicon layer () of a first doping type is situated on predetermined regions () of the intrinsic buffer layer. The first layer has interstices () between said predetermined regions (). The first silicon layer comprises at least partially a microcrystalline layer at its side away from the substrate. A microcrystalline silicon layer () of a second doping type is situated on said first silicon layer (). A third silicon layer () of the second doping type is situated on said intrinsic buffer layer at the interstices, the third silicon layer being amorphous at its side facing said silicon-based substrate and comprising an at least partially microcrystalline layer portion to the side away from the intrinsic buffer layer.

Photovoltaic device and method for manufacturing the same

A multiple-junction photoelectric device includes sequentially, a substrate, a first conducting layer, at least two elementary photoelectric devices, at least one of the elementary photoelectric devices being made of microcrystalline silicon, and a second conducting layer. The first conducting layer has a surface facing the microcrystalline silicon elementary photoelectric device such that the surface:

Multiple-junction photoelectric device and its production process

Growing community of inventors

Neuchâtel, Switzerland

Matthieu Despeisse