Samsung Electronics Co., Ltd.

Rheinisch-westfalische Technische Hochschule (rwth) Aachen

Rheinisch-westfalische Technische Hochschule Aachen

Interpane Entwicklungs-und, Beratungsgesellschaft Mbh

Interpane Entwicklungs - Und Beratungsgesellschaft Mbh & Co., Kg

Matthias Wuttig

Yoon-Ho Khang

Tae-Yon Lee

Dong-seok Suh

Ki-Joon Kim

Cheol-Kyu Kim

Dong-Seok Suh

Youn-seon Kang

Ki-joon Kim

Lothar Herlitze

Daniel Wamwangi

Shuai Wei

Xiaoling Lu

Julian Pries

Yudong Cheng

Daniel Severin

Hansjörg Weis

Michael Purwins

Sebastian MÄDER

Rüdiger M Schmidt

A phase-change memory () for the non-volatile storage of binary contents stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material () between an amorphous and a crystalline phase. The state with respect to the electrical conductivity of the material () and/or the reflection properties of the material () determines the information content of the phase-change memory (). A method for non-volatile storage of binary contents in a phase-change memory (), which stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material () between an amorphous and a crystalline phase, whereby the state with respect to the electrical conductivity of the material () and/or the reflection properties of the material () determines the information content of the phase-change memory ().

Phase-change memory

A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change material layer includes Sb and at least one of In and Ga.

Phase change material layers and phase change memory devices including the same

Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization temperature than a GeSbTe(GST) material. The phase change material may be InSbTeSe. The index X of indium (In) is in the range of 25 wt %&#x2266;X&#x2266;60 wt %. The index Y of antimony (Sb) is in the range of 1 wt %&#x2266;Y&#x2266;17 wt %. The index Z of tellurium (Te) is in the range of 0 wt %&#x3c;Z&#x2266;75 wt %.

Doped phase change material and pram including the same

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Matthias Wuttig