Osram Opto Semiconductors Gmbh

Matthias Winter

Georg Bogner

Berthold Hahn

Johannes Baur

Andreas Ploessl

Stephan Kaiser

Franz Eberhard

Michael Fehrer

Wilhelm Stein

Herbert Brunner

Günter Waitl

Karlheinz Arndt

Heinrich Noll

Patrick Kromotis

Harald Jäger

Markus Zeiler

Ralf Mayer

Thomas Höfer

Michael Hiegler

An optoelectronic component () is proposed that comprises a housing body () and at least one semiconductor chip () disposed thereon, said housing body having a base part () comprising a connector body (), on which a connecting conductor material () is disposed, and said housing body having a reflector part () comprising a reflector body (), on which a reflector material () is disposed, wherein said connector body and said reflector body are preformed separately from each other and said reflector body is disposed on said connector body in the form of a reflector top.

Optoelectronic component with multi-part housing body

A radiation-emitting or -receiving semiconductor chipis soft-soldered for mounting on a leadframeover which a prefabricated plastic encapsulant, a so-called premolded package, is injection-molded. Through the use of a low-melting solderapplied in a layer thickness of less than 10 &#x3bc;m, the soldering process can be carried out largely without thermal damage to the plastic encapsulant

Method for attaching a semiconductor chip in a plastic encapsulant, optoelectronic semiconductor component and method for the production thereof

A process is specified for producing a radiation-emitting component comprising a housing body and a carrier for a radiation-emitting semiconductor body, in which the carrier is produced in an injection molding process from a molding compound containing a metal.

Radiation-emitting component provided with metallic injected-molded carrier

A method for producing an electrical contact of an optoelectronic semiconductor chip (), comprising providing a mirror layer (), comprised of a metal or metal alloy, over the semiconductor chip; providing a protective layer () over said mirror layer; providing a layer sequence of a barrier layer and a coupling layer () over said protective layer; and providing a solder layer () over said layer sequence.

Method for producing an electrical contact for an optoelectronic semiconductor chip

An optoelectronic component () having a semiconductor arrangement () which emits and/or receives electromagnetic radiation and which is arranged on a carrier () which is thermally conductively connected to a heat sink (). External electrical connections () are connected to the semiconductor arrangement (), where the external electrical connections () are arranged in electrically insulated fashion on the heat sink () at a distance from the carrier (). This results in an optimized component in terms of the dissipation of heat loss and the radiation of light and also in terms of making electrical contact and the packing density in modules.

Optoelectronic component and a module based thereon

The invention relates to an optoelectronic component containing an optoelectronic chip () and containing a chip carrier () that has a central region () on which the chip is fixed and that comprises terminals () extending outwardly from the central region of the chip carrier () to the outside, wherein the chip and portions of the chip carrier are enveloped by a body () and wherein the projection of the body and that of each of the longitudinal axes of the terminals onto the contact plane between the chip and the chip carrier are substantially point-symmetrical with respect to the central point of the chip. The invention further relates to an arrangement comprising said component. The advantage of the symmetrical configuration of the component is that the risk of thermomechanically induced failures of the component is reduced.

Optoelectronic component

An electrical contact for an optoelectronic device which includes a mirror layer () of a metal or a metal alloy, a protective layer (), which serves for reducing the corrosion of the mirror layer (), a barrier layer (), a coupling layer (), and a solder layer (). A contact of this type is distinguished by high reflectivity, good ohmic contact with respect to the semiconductor, good adhesion on the semiconductor and good adhesion of the layers forming the contact with one another, good thermal stability, high stability with respect to environmental influences, and also solderability and patternability.

Growing community of inventors

Wuppertal, Germany

Matthias Winter