Ihp Gmbh-innovations for High Performance Microelectronics/leibniz-institut Fur Innovative Mikroelektronik

Matthias Wietstruck

Dirk Wolansky

Mehmet Kaynak

Steffen Marschmeyer

Philip Kulse

Marco Lisker

Matteo Stocchi

Zhibo Cao

Method for producing a semiconductor device by providing a silicon wafer having a plurality of equal height raised portions on a first surface thereof; depositing an etch stop layer on the first surface; planarizing a surface of the etch stop layer; permanently bonding a first carrier wafer on the etch stop layer surface; producing components on or in a second wafer surface in a FEOL process; etching a plurality of trenches into the wafer, each trench formed at the respective location of one of the raised portions; depositing side wall insulation layers on side walls of the trenches; forming through-silicon vias by filling the trenches with electrically conductive material; producing a conductor path stack in a BEOL process for contacting the active components on the second surface; temporarily bonding a second carrier wafer onto a surface of the conductor path stack; removing the first carrier wafer and exposing the vias.

Technological method for preventing, by means of buried etch stop layers, the creation of vertical/lateral inhomogeneities when etching through-silicon vias

Growing community of inventors

Berlin, Germany

Matthias Wietstruck