Infineon Technologies Ag

Matthias Schmeide

Henning Feick

Olaf Storbeck

Kerstin Kaemmer

Thomas Bertrams

Stephan Kudelka

Harald Seidl

Martin Gutsche

Thomas Hecht

Stefan Jakschik

Uwe Schröder

According to various embodiments, a method for processing a carrier may include: doping a carrier with fluorine such that a first surface region of the carrier is fluorine doped and a second surface region of the carrier is at least one of free from the fluorine doping or less fluorine doped than the first surface region; and oxidizing the carrier to grow a first gate oxide layer from the first surface region of the carrier with a first thickness and simultaneously from the second surface region of the carrier with a second thickness different from the first thickness.

Method for processing a carrier, a carrier, and a split gate field effect transistor structure

In a method for forming patterned ceramic layers, a ceramic material is deposited on a substrate and is subsequently densified by heat treatment, for example. In this case, the initially amorphous material is converted into a crystalline or polycrystalline form. In order that the now crystalline material can be removed again from the substrate, imperfections are produced in the ceramic material, for example by ion implantation. As a result, the etching medium can more easily attack the ceramic material, so that the latter can be removed with a higher etching rate. Through inclined implantation, the method can be performed in a self-aligning manner and the ceramic material can be removed on one side, by way of example, in trenches or deep trench capacitors.

Method for patterning ceramic layers

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Langebrueck, Germany

Matthias Schmeide