Infineon Technologies Ag

Matthias Rudolph

Thomas Morgenstern

Jana Haensel

Jens Stolze

The present invention provides a fabrication method for a semiconductor structure having a partly filled trench, having the following steps: provision of a semiconductor structure () having a trench (); filling of the trench () with a filling () in such a way that the filling () projects above a surface (OF) of the semiconductor structure () by a first height (h1), the filling () covering the trench () and the periphery () of the trench (); planarization of the filling () in a first etching step in such a way that the filling () is essentially planar with the surface (OF) of the semiconductor structure (); and sinking of the filling () in the trench () in a second etching step by a predetermined depth (T) proceeding from the surface of the semiconductor structure (); essentially the same plasma power and the same etchant composition being used for the first and second etching steps.

Fabrication method for a semiconductor structure having a partly filled trench

The present invention provides a processing method that changes the given and unfavorable surface contour of a material layer to a predetermined, more favorable surface contour at least along a selected radial direction of the workpiece. Due to the fact that the etch process included into the processing method affects the whole workpiece simultaneously, a high throughput is achievable and the etching method is easily applied in an industrial setting, for example for the mass production of semiconductor products.

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Dresden, Germany

Matthias Rudolph