Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Freiberger Compound Materials Gmbh

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

Matthias Peter

Tobias Meyer

Alexander Walter

Tetsuya Taki

Rainer Butendeich

Joachim Hertkorn

Matthias Sabathil

Uwe Strauss

Lutz Höppel

Christian Leirer

Martin Strassburg

Christoph Eichler

Jürgen Off

Peter Stauss

Werner Bergbauer

Adrian Stefan Avramescu

Frank Habel

Thomas Lehnhardt

Alfred Lell

Volker Härle

Korbinian Perzlmaier

Stefan Grötsch

Dominik Eisert

Karl Engl

Juergen Off

Andreas Loeffler

Hubert Maiwald

Magnus Ahlstedt

Ferdinand Scholz

Klaus Köhler

Peter Brückner

Stephan Miller

Dario Schiavon

Reiner Windisch

Lutz Hoeppel

Alexander Frey

Norbert Linder

Andreas Biebersdorf

Hans-Jürgen Lugauer

Ulrich Zehnder

Andreas Löffler

Simeon Katz

Philipp Drechsel

Lorenzo Zini

Kirstin Petersen

Nikolaus Gmeinwieser

Michael Binder

Adam Bauer

Georg Brüderl

Andreas Leber

Kai Gehrke

Frank Baumann

Asako Hirai

Teresa Wurm

Günter Spath

Tobias Gotschke

Jan-Philipp Ahl

Rolf Aidam

Hans-Juergen Lugauer

Thomas Bauer

Jan Wagner

Uwe Strausse

Uwe Strauß

Jürgen Däubler

Thorsten Passow

Ansgar Laubsch

Stefan GRÖTSCH

In an embodiment an edge-emitting semiconductor laser includes a semiconductor layer sequence having a waveguide region with an active layer disposed between a first waveguide layer and a second waveguide layer and a layer system arranged outside the waveguide region configured to reduce facet defects in the waveguide region, wherein the layer system includes one or more layers with the material composition AlInGaN with 0≤x≤1, 0≤y<1 and x+y≤1, wherein at least one layer of the layer system includes an aluminum portion x≤0.05 or an indium portion y≥0.02, wherein a layer strain is at least 2 GPa at least in some areas, and wherein the semiconductor layer sequence is based on a nitride compound semiconductor material.

Edge-emitting semiconductor laser

Disclosed is a conversion element () comprising an active region () that is formed by a semiconductor material and includes a plurality of barriers () and quantum troughs (), a plurality of first structural elements () on a top face (la) of the conversion element (), and a plurality of second structural elements () and/or third structural elements () which are arranged on a face of the active region () facing away from the plurality of first structural elements (). Also disclosed is a method for producing a conversion element of said type.

Conversion element and radiation-emitting semiconductor device comprising a conversion element of said type

An optoelectronic semiconductor device includes a semiconductor body in which an active layer configured to generate or detect electromagnetic radiation, a first interlayer and a p-conducting contact layer are formed, and a connection layer applied to the semiconductor body, wherein the contact layer is disposed between the first interlayer and the connection layer and adjoins the connection layer, the active layer is arranged on a side of the first interlayer remote from the contact layer, the first interlayer and the contact layer are based on a nitride compound semiconductor, the contact layer is doped with a p-dopant, the contact layer has a thickness of at most 50 nm, and the contact layer includes a lower aluminum content than the first interlayer.

Optoelectronic semiconductor component

A laser diode having a semiconductor layer sequence based on a nitride compound semiconductor material includes an n-type cladding layer, a first waveguide layer, a second waveguide layer and an active layer, and a p-type cladding layer including a first partial layer and a second partial layer, wherein the first partial layer includes AlGaN with 0&#x2264;x1&#x2264;1 or AlInGaN with 0&#x2264;x1&#x2264;1, 0&#x2264;y1&#x3c;1 and x1+y1&#x2264;1, the aluminum content x1 decreases in a direction pointing away from the active layer so that the aluminum content has a maximum value x1and a minimum value x1&#x3c;x1, and the second partial layer includes AlGaN with 0&#x2264;x2&#x2264;x1or AlInGaN with 0&#x2264;x2&#x2264;x1, 0&#x2264;y2&#x3c;1 and x2+y2&#x2264;1.

Laser diode

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

Optoelectronic semiconductor chip and method for fabrication thereof

A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.

Light-emitting semiconductor chip

The invention relates to a component () having a semiconductor layer sequence, which has a p-conducting semiconductor layer (), an n-conducting semiconductor layer (), and an active zone () arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers () having intermediate quantum well layers () and a plurality of n-side barrier layers () having intermediate quantum layers (). Recesses () having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. The interior barrier layers have a larger average layer thickness than the p-side barrier layers.

Component having a multiple quantum well structure

A method for producing an optoelectronic semiconductor chip based on a nitride semiconductor system is specified. The method comprises the steps of: forming a semiconductor section with at least one p-doped region; and forming a covering layer disposed downstream of the semiconductor section in a growth direction of the semiconductor chip, said covering layer having at least one n-doped semiconductor layer. An activation step suitable for electrically activating the p-doped region is effected before or during the formation of the covering layer. An optoelectronic semiconductor chip which can be produced by the method is additionally specified.

Optoelectronic semiconductor chip and method for the production thereof

Described is a method for producing a nitride compound semiconductor layer, involving the steps of:&#x2014;depositing a first seed layer () comprising a nitride compound semiconductor material on a substrate ();&#x2014;desorbing at least some of the nitride compound semiconductor material in the first seed layer from the substrate ();&#x2014;depositing a second seed layer () comprising a nitride compound semiconductor material; and&#x2014;growing the nitride compound semiconductor layer () containing a nitride compound semiconductor material onto the second seed layer ().

Method for the production of a nitride compound semiconductor layer

An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

An optoelectronic semiconductor component includes a layer sequence including a p-doped layer, an n-doped layer and an active zone that generates electromagnetic radiation arranged between the n-doped layer and the p-doped layer, wherein the n-doped layer includes at least GaN, an interlayer is arranged in the n-doped layer, wherein the interlayer includes AlGaN, wherein 0&#x3c;x&#x2266;1, and the interlayer includes magnesium.

Semiconductor component comprising an interlayer

The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.

Optoelectronic component and method for the production thereof

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Wuppertal, Germany

Matthias Peter