Infineon Technologies Ag

Matthias Mueller

Hans-Joachim Schulze

Ravi Keshav Joshi

Frank Hille

Holger Schulze

Carsten Schaeffer

Juergen Steinbrenner

Johann Strasser

Oliver Humbel

Roman Roth

Frank Umbach

Thomas Laska

Stefan Willkofer

Thomas Kunstmann

Michael Fugger

Eva-Maria Hess

Anja Gissibl

According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a semiconductor body and a metal adhesion and barrier structure between the metal structure and the semiconductor body. The metal adhesion and barrier structure includes a first layer having titanium and tungsten, and a second layer having titanium, tungsten, and nitrogen on the first layer having titanium and tungsten.

Semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.

Porous metal etching

Growing community of inventors

Wuppertal, Germany

Matthias Mueller