Schott Ag

Matthias Mueller

Ingo Schwirtlich

Andreas Menzel

Joerg Kandler

Uwe Sahr

Lutz Parthier

Gordon Von Der Goenna

Michael Clauss

Lars Ortmann

Markus Finkbeiner

Frank-Thomas Lentes

Thomas Kuckelkorn

Frank Buellesfeld

Nikolaus Benz

Reinhard Maennl

Michael Siller

Fritz-Dieter Doenitz

Andreas Weisleder

Guenter Bauer

Rainer Guett

In the method of making a monocrystalline or polycrystalline semiconductor material semiconductor raw material is introduced into a melting crucible and directionally solidified using a vertical gradient freeze method. The molten material trickles downward, so that the raw material that has not yet melted gradually slumps in the melting crucible. The semiconductor raw material is replenished from above onto a zone of semiconductor raw material which has not yet melted or is not completely melted to at least partly compensate for shrinkage of the raw material and to raise the filling level. To reduce the melting time and influence the thermal conditions in the system as little as possible, the semiconductor raw material to be replenished is heated to a temperature below its melting temperature and introduced into the crucible in the heated state.

Method for producing a monocrystalline or polycrystalline semiconductor material

The device for production of a monocrystalline or a multicrystalline material blank, especially a silicon multicrystalline blank, using the VGF method has a crucible with a rectangular or square cross section. A flat heating device, especially a jacket heater, which generates an inhomogeneous temperature profile, is arranged around the crucible. This temperature profile corresponds to the temperature gradient formed in the center of the crucible. The heat output of the flat heating device decreases from the top to the bottom end of the crucible. The flat heating device includes parallel heating webs, which extend in a meandering course. The heat outputs from the heating webs differ according to their different conductor cross sections. To avoid local overheating in corner areas of the crucible, constrictions of the cross sections of the heating webs are provided at inversion zones of their meandering course.

Device for making monocrystalline or multicrystalline materials, in particular multicrystalline silicon

The method of producing monocrystalline or multicrystalline blanks, especially silicon blanks, by using a vertical-gradient-freeze method, includes providing a crucible with a rectangular or square-shaped cross section and a heating jacket disposed around the crucible, which has a number of flat heating elements with a meandering course disposed on side faces of the crucible. The heating jacket generates an inhomogeneous temperature profile corresponding to a temperature gradient in the center of the crucible. The flat heating elements preferably comprise parallel heating webs, whose heat output is set by varying the conductor cross section. To avoid local overheating in corner areas of the crucible, constrictions of the cross section are provided at inversion zones of the meandering courses of the webs. The flat heating elements can be formed from a plurality of interconnected individual segments.

Device and method for the production of monocrystalline or multicrystalline materials, in particular multicrystalline silicon

A method for producing high-purity, large-volume monocrystals that are especially radiation-resistant and have low intrinsic birefringence. From a melt of crystalline raw material, with controlled cooling and solidification, a crystal is generated. As the crystalline raw material, shards and/or waste from already-grown crystals is used, and the re-used raw material In this way, crystals can be obtained which after tempering have a BSDF value of &#x3c;7&#xd7;10, an RMS homogeneity after the subtraction of 36 Zernike coefficients of &#x3c;15&#xd7;10, an SDR-RMS value in the 111 direction of &#x3c;0.2 nm/cm.

Production of high-purity, large-volume monocrystals that are especially radiation-resistant from crystal shards

The method of making a vacuum tube collector or X-ray tube, which includes a matching glass-metal joint, includes providing a glass tube () made of a glass with a composition, in percent by weight on the basis of oxide content, consisting of BO, 8-11.5; AlO, 5-9; NaO, 5-9; KO, 0-5; CaO, 0.4-1.5; balance, SiO; and bonding, preferably fusing or melting, an end portion of the glass tube () with a metal part () in order to bond or attach the glass tube to the metal part, thus forming a long-lasting glass-metal joint. The method of making the glass-metal joint is performed without using intermediary glass compositions of varying thermal conductivities. In the case of the vacuum tube collector the method can provide the basis for an automated manufacture of the vacuum tube collector.

Method of making a glass-metal joint, glass-metal joint made thereby and method of making a solar energy tube collector with said joint

Single crystals with low scattering, small refractive index differences and few small angle grain boundaries have a bi-directional scattering distribution function value (BSDF) of less than 1.5*10or 5*10.

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The method provides CaFsingle crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaFstarting material is heat-treated for at least five hours at temperatures between 1000&#xb0; C. and 1250&#xb0; C. and then sublimed at a sublimation temperature of at least 1100&#xb0; C. in a vacuum of at most 5*10mbar to form a vapor. The vapor is condensed at a condensation temperature of at least 500&#xb0; C., which is at least 20&#xb0; C. below the sublimitation temperature, to form a condensate. Then a melt formed from the condensate is cooled in a controlled manner to obtain the single crystal, which is subsequently tempered. The method is preferably performed with a CaFstarting material including waste material and cuttings from previously used melts.

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Jena, Germany

Matthias Mueller