Infineon Technologies Ag

Qimonda Ag

Matthias Markert

Christoph Kadow

Dominik Heiss

Christoph Glacer

Hans Taddiken

Nicolas Nagel

Martin Bartels

Hans-Dieter Wohlmuth

Dirk Manger

Christoph Kleint

Dominik Olligs

Dirk Caspary

Martin Verhoeven

Hocine Boubekeur

Thomas Tatry

A method includes providing a substrate having a main surface, forming a layer of thermally insulating material on the main surface, forming strips of phase change material on the layer of thermally insulating material such that strips of phase change material are separated from the main surface by thermally insulating material, forming first and second RF terminals on the main surface that are laterally spaced apart from one another and connected to the strips of phase change material, and forming a heater structure having heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material, wherein each of the strips of phase change material includes multiple outer faces, and wherein portions of both outer faces from the strips of phase change material are disposed against one of the heating elements.

Phase change switch with multi face heater configuration

A switch device including a semiconductor substrate is provided. A trench is formed in the substrate, and a phase change material is provided at least partially in the trench. A heater for heating the phase change material is also provided.

Switch device and method for manufacturing a switch device

A method of forming a phase change switching device includes providing a substrate, forming first and second RF terminals on the substrate, forming a strip of phase change material on the substrate that is connected between the first and second RF terminals, forming a heating element adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material. The first and second RF terminals and the heating element are formed by a lithography process that self-aligns the heating element with the first and second RF terminals.

Phase change switch with self-aligned heater and RF terminals

A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.

An integrated circuit and a method of forming an integrated circuit. One embodiment includes a conductive line formed above a surface of a carrier. A slope of the sidewalls of the conductive line in a direction perpendicular to the surface of the carrier reveals a discontinuity and a width of the conductive line in an upper portion thereof is larger than the corresponding width in the lower portion.

Integrated circuit and method of forming an integrated circuit

A hard mask layer stack for patterning a layer to be patterned includes a carbon layer disposed on top of the layer to be patterned, a first layer of a material selected from the group of SiOand SiON disposed on top of the carbon layer and a silicon layer disposed on top of the first layer. A method of patterning a layer to be patterned includes providing the above described hard mask layer stack on the layer to be patterned and patterning the silicon hard mask layer in accordance with a pattern to be formed in the layer that has to be patterned.

Growing community of inventors

Dresden, Germany

Matthias Markert