Infineon Technologies Ag

Matthias Müller

Hans-Joachim Schulze

Francisco Javier Santos Rodriguez

Gerhard Schmidt

Ravi Keshav Joshi

Frank Hille

Holger Schulze

Carsten Schaeffer

Juergen Steinbrenner

Oliver Humbel

Roman Roth

Frank Umbach

Thomas Laska

Michael Fugger

Daniel Schlögl

According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a silicon carbide semiconductor body and a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten.

Silicon carbide semiconductor device having a metal adhesion and barrier structure and a method of forming such a semiconductor device

A power semiconductor device includes a semiconductor body, having an active zone and a high voltage peripheral zone laterally adjacent to each other, the high voltage peripheral zone laterally surrounding the active zone. The device further includes a metallization layer on a front surface of the semiconductor body and connected to the active zone, a first barrier layer, comprising a high-melting metal or a high-melting alloy, between the active zone and the metallization layer, and a second barrier layer covering at least a part of the peripheral zone, the second barrier layer comprising an amorphous semi-isolating material. The first barrier layer and the second barrier layer partially overlap and form an overlap zone. The overlap zone extends over an entire circumference of the active zone. A method for producing such a power semiconductor device is also provided.

Semiconductor device and method for producing the same

Growing community of inventors

Wuppertal, Germany

Matthias Müller