Infineon Technologies Ag

Matthias Kr&ouml;nke

Walter Hartner

Nicolas Nagel

Rainer Bruchhaus

Gerhard Enders

Thomas Mikolajick

Volker Weinrich

Michael R&ouml;hner

G&uuml;nther Schindler

Igor Kasko

Ihar Kasko

A method of fabricating semiconductor memory devices is simplified by providing at least some plug regions, which are provided for contacting storage capacitor devices of a capacitor configuration, such that the plug regions have in each case a region that is elevated above the surface region of a passivation region.

Method for fabricating a semiconductor memory device

A method for producing a semiconductor structure includes applying at least one first layer, etching the first layer using a masking layer such that fences are produced, and, after removal of the masking layer and application of an auxiliary layer, the auxiliary layer and the fences are removed jointly except for a predetermined extent of the auxiliary layer. The present invention also relates to use of the method for producing spacers in a semiconductor structure.

Method for producing a semiconductor structure, and use of the method

To achieve a highest possible integration density in a semiconductor memory device having storage capacitors as storage elements, the method according to the invention forms the capacitor devices in substantially vertically extending fashion, to, as a result, achieve a substantially three-dimensional configuration and an configuration extending into the third dimension for the capacitor devices, a contact connection of the storage capacitors being formed after the production of the storage capacitors.

To manufacture FeRAM memories in a particularly space-saving fashion and, thus, increase the storage density, a manufacturing method forms at least some of the multiplicity of capacitor devices used as storage elements with a multiplicity of individual capacitors that are connected in parallel with one another. The individual capacitors have ferroelectric or paraelectric dielectric regions with different coercitive voltages such that there is a resulting multiplicity of storage states for each of the individual capacitors.

FeRAM memory and method for manufacturing it

A method for fabricating a capacitor configuration in particular an FeRAM memory device includes the step of filling intermediate regions, which remain free after the formation of a capacitor device on a surface of a substrate, with at least one electrically insulating intermediate layer. The at least one electrically insulating intermediate layer is filled at least up to a level of a topmost layer of the capacitor device.

Method for fabricating a capacitor configuration

The integrated ferroelectric semiconductor memory is fabricated according to the stack cell principle. A ferroelectric capacitor module is formed on an intermediate oxide above a selection transistor located in or on a semiconductor wafer. The capacitor module is brought into conductive contact by its bottom capacitor electrode with an electrode of the selection transistor by means of an electrically conductive plug leading through the intermediate oxide. A layer system of a conductive oxygen diffusion barrier and a conductive adhesion layer is deposited directly below the bottom capacitor electrode, and the adhesion layer and the overlying oxygen diffusion barrier are deposited directly into the contact hole and form the plug at least in the region lying directly below the bottom capacitor electrode.

Method for fabricating an integrated ferroelectric semiconductor memory and integrated ferroelectric semiconductor memory

A random access memory having a multiplicity of memory cells having logic states that can be changed by a control voltage. At least some of the memory cells include an additional device that can be activated by means of an enforced control voltage that is different from the control voltage, in order to impress a defined logic state on the memory cell.

Growing community of inventors

Dresden, Germany

Matthias Krönke

Growing community of inventors

Dresden, Germany

Matthias Kr&ouml;nke

Matthias Krönke