Robert Boschgmbh

Yama, Gary

Purkl, Fabian

Liger, Matthieu

Illing, Matthias

Matthias Illing

Hubert Benzel

Christoph Schelling

Simon Armbruster

Gerhard Lammel

Stefan Pinter

Franz Laermer

Ando Feyh

Gary Yama

Frieder Haag

Silvia Kronmueller

Frank Schaefer

Ralf Reichenbach

Torsten Kramer

Matthieu Liger

Paul Farber

Stefan Finkbeiner

Joerg Brasas

Matthias Boehringer

Heribert Weber

Frank Fischer

Christian Ohl

Jiri Marek

Fabian Purkl

Jochen Franz

Heiko Stahl

Helmut Baumann

Hans-Peter Trah

Dietrich Schubert

Stefan Weiss

Oliver Schatz

Georg Bischopink

Michael Fehrenbach

Frank Henning

Peter Hein

Martin Schoefthaler

Gerald Hopf

Ralf Schellin

Po-jui Chen

Simon Ambruster

In one embodiment, a method of forming a semiconductor device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a first trench in the sacrificial layer, forming a first sidewall layer with a thickness of less than about 50 nm on a first sidewall of the first trench using atomic layer deposition (ALD), and removing the sacrificial layer.

Atomic layer deposition strengthening members and method of manufacture

A method for producing a silicon substrate, including the steps of providing a silicon substrate having an essentially planar silicon surface, producing a porous silicon surface having a plurality of pores, in particular having macropores and/or mesopores and/or nanopores, applying a filling material that is to be inserted into the silicon, which has a diameter that is less than a diameter of the pores, inserting the filling material into the pores and removing the excess filling material form the silicon surface, if necessary, and tempering the silicon substrate that is furnished with the filling material that has been filled into the pores, at a temperature between ca. 1000&#xb0; C. and ca. 1400&#xb0; C., in order to close the generated pores again and to enclose the filling material.

Method for producing a silicon substrate having modified surface properties and a silicon substrate of said type

A production method for chips, in which as many method steps as possible are carried out in the wafer composite, that is, in parallel for a plurality of chips disposed on a wafer. This is a method for producing a plurality of chips whose functionality is implemented on the basis of the surface layer of a substrate. In this method, the surface layer is patterned and at least one cavity is produced below the surface layer, so that the individual chip regions are connected to each other and/or to the rest of the substrate by suspension webs only, and/or so that the individual chip regions are connected to the substrate layer below the cavity via supporting elements in the region of the cavity. The suspension webs and/or supporting elements are cut when the chips are separated. The patterned and undercut surface layer of the substrate is embedded in a plastic mass before the chips are separated.

Method for producing a plurality of chips and a chip produced accordingly

A method for manufacturing chips (), in which at least one diaphragm () is produced in the surface layer of a semiconductor substrate () spanning a cavity (). The functionality of the chip () is then integrated into the diaphragm (). In order to separate the chip (), the diaphragm () is detached from the substrate composite. The method according to the present invention is characterized by metal plating of the back of the chip () in an electroplating process before the chip is separated.

Method for manufacturing chips

A method for fabricating a pair of large surface area planar electrodes. The method includes forming a first template above a first substrate, the first template having a first plurality of pores, coating the first plurality of pores of the first template with a first layer of conducting material to form a first electrode, placing the first plurality of pores of the first electrode in proximity to a second electrode, thereby forming a gap between the first plurality of pores and the second electrode, and filling the gap with an electrolyte material.

Method of manufacturing a planar electrode with large surface area

A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.

Method for manufacturing a semiconductor structure, and a corresponding Semiconductor Structure

A method for producing a micromechanical diaphragm sensor, and a micromechanical diaphragm sensor produced with the method. The micromechanical diaphragm sensor has at least one first diaphragm as well as a second diaphragm, which is disposed essentially on top of the first diaphragm. Furthermore, the micromechanical diaphragm sensor has a first cavity and a second cavity, which is essentially disposed above the first cavity.

Micromechanical diaphragm sensor having a double diaphragm

Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions. This lattice-like structure extends preferably from the surface of the semiconductor into the depth. The etch mask for creating the depressions may be removed, optionally prior to or subsequent to the anodization. A temperature treatment is carried out for creating the hollow space and the membrane in the semiconductor substrate which forms the sensor element. During this process, the hollow space is created from the at least one area that has been rendered porous beneath a depression and the membrane above the hollow space is created from the lattice-like structure by rearranging the semiconductor material.

Method for manufacturing a micromechanical sensor element

A micromechanical sensor element and a method for the production of a micromechanical sensor element that is suitable, for example in a micromechanical component, for detecting a physical quantity. Provision is made for the sensor element to include a substrate, an access hole and a buried cavity, at least one of the access holes and the cavity being produced in the substrate by a trench etching and/or, in particular, an isotropic etching process. The trench etching process includes different trenching (trench etching) steps which may be divided into a first phase and a second phase. Thus, in the first phase, at least one first trenching step is carried out in which, in a predeterminable first time period, material is etched out of the substrate and a depression is produced. In that trenching step, a typical concavity is produced in the wall of the depression. A passivation process is then carried out in that first phase, in which the concavity produced in the walls of the depression by the first trenching step is covered with a passivation material. The first trenching step and the first passivation process may be carried out repeatedly in alternating succession within the first phase, with the result that a typical corrugation is obtained on the walls of the depression so produced. In the second phase of the trench etching process, the cavity is produced through the at least one access hole produced by the depression, by carrying out a second trenching step of a predetermined second time period that is distinctly longer in comparison with the first time period.

Sensor element with trenched cavity

An apparatus for supplying energy to a sensor co-moved with a wheel of a vehicle, which contains a generator co-moved with the wheel of the vehicle, the generator generating electrical energy from vibrational motions of the vehicle.

Method and apparatus for supplying energy to sensors

A micromechanical structure and a corresponding manufacturing method. The structure includes a substrate, which includes an anchoring device, and a centrifugal mass, which is connected to the anchoring device via a flexible spring device, so that the centrifugal mass is elastically deflectable from its rest position. The centrifugal mass includes clearances and is configured to be deflectable by etching a sacrificial layer underneath it. The sacrificial layer is present in a first area located underneath the centrifugal mass with a first etchable thickness, and in a second area located underneath the centrifugal mass with a second etchable thickness, the second thickness is greater than the first thickness. The centrifugal mass is structured in the first area so that in etching only a maximum of two etching fronts may come together in order to limit the etching residue deposits.

Micromechanical structure, in particular for an acceleration sensor or yaw rate sensor and a corresponding method for producing the same

A micromechanical device, in particular an acceleration sensor, includes a seismic mass which is resiliently supported on a substrate via a first flexural spring device and which can be deflected in at least one direction by an acceleration, the deflection being able to be limited by a stop device. The stop device has at least one limit stop that is resiliently supported on the substrate via a second flexural spring device, the second flexural spring device having a greater flexural strength than the first flexural spring device.

Micromechanical device

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Kusterdingen, Germany

Matthias Illing