Intel Corporation

Matthias Gries

Ruchir Saraswat

Andre Schaefer

Marcelo Cintra

Tor Lund-Larsen

Sebastian Steibl

Thomas Lehnig

Nicholas Paul Cowley

Niklas Linkewitsch

Tim Kranich

In accordance with the present description, cache operations for a memory-sided cache in front of a backing memory such as a byte-addressable non-volatile memory, include combining at least two of a first operation, a second operation and a third operation, wherein the first operation includes evicting victim cache entries from the cache memory in accordance with a replacement policy which is biased to evict cache entries having clean cache lines over evicting cache entries having dirty cache lines. The second operation includes evicting victim cache entries from the primary cache memory to a victim cache memory of the cache memory, and the third operation includes translating memory location addresses to shuffle and spread the memory location addresses within an address range of the backing memory. It is believed that various combinations of these operations may provide improved operation of a memory. Other aspects are described herein.

Cache operations for memory management

A memory controller operable for selective memory access to areas of memory exhibiting different attributes leverages different memory capabilities that vary access speed, retention time and power consumption, among others. Different areas of memory have different attributes while remaining available to applications as a single contiguous range of addressable memory. The memory controller employs an operating mode that identifies operational priorities for a computing device, such as speed, power conservation, or efficiency. The memory controller identifies an area of memory based on an expected usage of the data stored in the area, for example an access frequency indicating future retrieval. The memory controller therefore selects areas of memory based on the operating mode and the expected usage of data to be stored in the area according to a heuristic that favors areas of memory based on those exhibiting attributes having a high correspondence to the expected usage of the data.

Heterogenous memory access

Methods and apparatus related to in-place change between transient and persistent state for data structures on non-volatile memory are described. In one embodiment, controller logic causes a change in a state of a first portion of one or more non-volatile memory devices between a persistent state and a transient state and without moving data stored in the first portion of the one or more non-volatile memory devices. Other embodiments are also disclosed and claimed.

In-place change between transient and persistent state for data structures on non-volatile memory

Dynamic operations for operations for 3D stacked memory using thermal data. An embodiment of a memory device includes memory having multiple coupled memory elements and multiple thermal sensors, including a first thermal sensor in a first area of the memory stack and a second thermal sensor in a second area of the memory stack. A memory controller is to provide operations to modify thermal conditions of the memory elements based at least in part on thermal information generated by the thermal sensors.

Dynamic operations for 3D stacked memory using thermal data

A system monitors and dynamically changes memory mapping in a runtime of a computing system. The computing system has various memory resources, and multiple possible mappings that indicate how data is to be stored in and subsequently accessed from the memory resources. The performance of each memory mapping may be different under different runtime or load conditions of the computing device. A memory controller can monitor runtime performance of the current memory mapping and dynamically change memory mappings at runtime based on monitored or observed performance of the memory mappings. The performance monitoring can be modified for any of a number of different granularities possible within the system, from the byte level to memory channel.

Adaptive address mapping with dynamic runtime memory mapping selection

A 3D memory that is configurable for performance and power. An embodiment of a memory device includes a dynamic random-access memory (DRAM) including multiple memory dies, each memory die including multiple memory arrays, each memory array including peripheral logic circuits and a configurable logic. The memory device further includes a system element coupled with the DRAM, the system element including a memory controller. The memory controller is to provide for control of the configurable logic to provide for separate or shared peripheral logic circuits for one or more memory arrays, the configurable logic being configurable to enable or disable one or more of the peripheral logic circuits and to enable or disable one or more I/O connections between the memory arrays.

Growing community of inventors

Braunschweig, Germany

Matthias Gries