Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Ams-Osram International Gmbh

Matthias Goldbach

Andreas Dobner

Stefan Groetsch

Sebastian Wittmann

Ludwig Hofbauer

Thomas Schwarz

Peter Brick

Michael Zitzlsperger

Michael Wittmann

Uli Hiller

Michael Brandl

Markus Heinrich Klein

Rainer Huber

Matthias Hien

Andreas Waldschik

Matthias Bruckschloegl

Georg Bogner

Sebastian Stigler

Berthold Hahn

Stefan Illek

Britta Göötz

Klaus Reingruber

Ulrich Frei

Benjamin Claus Hoeflinger

Juergen Holz

Robert Regensburger

Ludwig Peyker

Benjamin Höflinger

Armin Wetterer

Hanna Schulz

An optoelectronic device includes a glass carrier, at least one light-scattering layer applied to the glass carrier, and at least one surface-emitting component in a chip size package with an emission surface and a surface facing away from the emission surface having a first and a second contact pad. The emission surface is arranged on the at least one light-scattering layer by way of an adhesive. At least one contact line contacts the second contact pad of the at least one surface-emitting component and extends along a side surface of the at least one surface-emitting component adjacent to the second contact pad in a direction of the glass carrier. A light-shaping structure is arranged on a surface of the glass carrier facing away from the surface-emitting component.

Optoelectronic device with glass carrier and method of manufacture

An optoelectronic device comprises a layer stack, which includes a carrier layer, a cover layer, and a first layer. The first layer is in particular an intermediate layer, arranged between the cover layer and the carrier layer. At least one electronic or optoelectronic element, in particular an optoelectronic light source, is arranged on the first layer and at least one layer of the layer stack and preferably all layers of the layer stack are at least partially transparent. The layer stack comprises at least one layer which comprises particles with a high thermal conductivity and/or at least one thermally conductive layer which is arranged between two adjacent layers of the layer stack.

Optoelectronic device

An optoelectronic apparatus comprises a transparent first cover, at least two carriers mounted on the first cover, wherein a plurality of optoelectronic elements configured to emit light are attached to each of the at least two carriers, and a second cover mounted on the at least two carriers, wherein the second cover has at least partially a lower optical transmittance than the first cover and/or the at least two carriers.

Apparatus comprising a carrier with optoelectronic elements and method for manufacturing the apparatus

An optoelectronic semiconductor component includes a semiconductor body having a main emission surface and an active region arranged to emit electromagnetic radiation. The optoelectronic semiconductor component also includes a receiving element arranged on the side of the semiconductor body opposite to the main emission surface. The optoelectronic semiconductor component also includes a radiation-transmissive molding compound. The radiation-transmissive molding compound completely surrounds the semiconductor body and the receiving element. A receiver frequency is assigned to the receiving element. The receiving element is configured to extract energy for operating the active region from an alternating electromagnetic field.

Optoelectronic semiconductor component and arrangement

An optoelectronic component includes at least one optoelectronic semiconductor chip with a main surface on which two electrical contacts are arranged. The optoelectronic component also includes a control chip for controlling the optoelectronic semiconductor chip with a plurality of electrical connection pads. The optoelectronic component further includes a housing with a housing body. The optoelectronic semiconductor chip is arranged with a mounting surface, which extends transversely to the main surface, in a first recess of the housing body. A side surface of the first recess forms an obtuse tilt angle with a bottom surface of the first recess. At least one of the electrical contacts of the optoelectronic semiconductor chip is electrically conductively connected to an electrical connection pad of the control chip via a conductor path. The conductor path is arranged at least in places on the side surface of the first recess.

Optoelectronic component and method for producing the same

An optoelectronic device, in particular an at least semi-transparent pane for example for a vehicle, comprises: a cover layer, a carrier layer, an intermediate layer between the cover layer and the carrier layer, wherein at least one and preferably a plurality of optoelectronic light sources, in particular μLEDS, is arranged on at least one surface of the intermediate layer and/or is at least partially embedded in the intermediate layer, wherein the intermediate layer is adapted such that light emitted by the optoelectronic light sources at least partially spreads in and along the intermediate layer and exits the intermediate layer within and/or at a pre-set distance to the respective optoelectronic light source in a direction through the cover layer and/or through the carrier layer.

An optoelectronic device comprises a plurality of layer segments, in particular intermediate layer segments, arranged between a cover layer and a carrier layer. At least one optoelectronic component is arranged on at least one of the plurality of layer segments and a first and a second layer segment of the plurality of the layer segments are overlapping each other along a first direction each forming a respective boundary region. The first layer segment comprises at least one first contact pad and the second layer segment comprises at least one second contact pad, wherein the at least one first and second contact pad are arranged in the respective boundary region facing each other and being mechanically and electrically connected. The at least one first and second contact pad each comprises a plurality of nanowires which are at least partially made of conductive material such as for example copper, gold, or nickel.

Window or surface of a vehicle comprising at least one optoelectronic component

In an embodiment a method for singulating components from a component composite includes providing the component composite comprising a structured substrate including component carrier bodies and connecting portions arranged between the component carrier bodies, and a base material, in which the connecting portions of the structured substrate are at least partially embedded, removing the base material in separating regions of the component composite, which include the connecting portions and singulating the component composite at the separating regions to form the components.

Method for singulating components from a component composite, and component

An optoelectronic device comprises a plurality of optoelectronic light sources being arranged on a first layer, in particular an intermediate layer being arranged between a cover layer and a carrier layer. The first layer comprises or consists of an at least partially transparent material and each optoelectronic light source of the plurality of optoelectronic light sources comprises an individual light converter for converting light emitted by the associated light source into converted light. The light converter of each optoelectronic light source is arranged on the first layer and/or the associated optoelectronic light source.

In one embodiment, the optoelectronic semiconductor device comprises at least two metallic lead frame parts and a circuit chip on the lead frame parts. An electrically insulating and opaque matrix material mechanically connects the lead frame parts. The circuit chip is embedded in the matrix material, so that a carrier is formed by the matrix material together with the lead frame parts and the circuit chip. An optoelectronic semiconductor chip is provided on a carrier upper side. Furthermore, the semiconductor device comprises at least one optical component on the carrier upper side.

Optoelectronic semiconductor component and method for producing optoelectronic semiconductor components

In at least one embodiment, the optoelectronic component comprises an optoelectronic semiconductor chip with an emission side and a rear side opposite the emission side. Furthermore, the component comprises a housing body with a top side and an underside opposite the top side, and a metal layer on the top side of the housing body. During proper operation, the semiconductor chip emits primary electromagnetic radiation via the emission side. The semiconductor chip is embedded in the housing body and laterally surrounded by the housing body. The emission side is on the rear side and the top side is downstream of the underside along a main emission direction of the semiconductor chip. The metal layer is at least partially reflecting or absorbing radiation generated by the optoelectronic component.

Optoelectronic component and method for producing an optoelectronic component

The invention relates to a method for controlling a current to a light-emitting diode in order for it to emit a desired light flux, wherein the current is determined depending on a time period during which the light-emitting diode is supplied with current, in order to generate the desired light flux for said light-emitting diode.

Method for controlling a current of a light-emitting diode

In one embodiment, an optoelectronic semiconductor device includes at least two lead frame parts and an optoelectronic semiconductor chip which is mounted in a mounting region on one of the lead frame parts. The lead frame parts are mechanically connected to one another via a casting body. The semiconductor chip is embedded in the cast body. In the mounting region the respective lead frame part has a reduced thickness. An electrical line is led over the cast body from the semiconductor chip to a connection region of the other of the lead frame parts. In the connection region, the respective lead frame part has the full thickness. From the connection region to the semiconductor chip the electrical line does not overcome any significant difference in height.

Optoelectronic semiconductor device and method for producing optoelectronic semiconductor devices

An optoelectronic semiconductor chip, a method for manufacturing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having an emission side, the emission side comprising a plurality of emission fields, partition walls on the emission side in a region between two adjacent emission fields and a conversion element on one or more emission fields, wherein the conversion element includes a matrix material with first phosphor particles incorporated therein, wherein the first phosphor particles are sedimented in the matrix material such that a mass fraction of the first phosphor particles is greater in a lower region of the conversion element facing the semiconductor layer sequence than in a remaining region of the conversion element, and wherein the partition walls are attached to the emission side without any additional connectors.

Optoelectronic semiconductor chip, method of manufacturing an optoelectronic component and optoelectronic component

A light source includes a plurality of semiconductor components, wherein a semiconductor component includes a plurality of light-emitting diodes, the diodes are arranged in a predefined grid in at least one column in or on the semiconductor component, and a control circuit that drives the individual diodes is arranged on the semiconductor component.

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Pentling, Germany

Matthias Goldbach