Touchpac Holdings, LLC

Infineon Technologies Ag

Touchcode Technologies, LLC

Printechnologies Gmbh

Printechnologics Gmbh

Matthias Foerster

Jan Thiele

Sascha Voigt

André Kreutzer

Albert Birner

Dietmar Temmler

Thomas Hecht

Michael Stadtmueller

Andreas Orth

Barbara Lorenz

Karin Weigelt

Daniel Koehler

Thoralt Franz

Marko Illing

The present invention relates to a method comprising providing one or more information carrier(s) with a dielectric and/or conductive pattern and a detection device having a capacitive touch screen and inducing an interaction between the information carrier and the touch screen, wherein the interaction is based on a difference in the dielectric coefficient and/or the conductivity of the pattern and generates a touch signal and wherein the interaction is induced by relative motion between the information carrier and the touch screen. The invention further relates to a system comprising an information carrier comprising a dielectric and/or conductive pattern which encodes information and a detection device having a touch screen; the detection device is able to decode the information upon interaction between the information carrier and the touch screen, wherein the interaction is caused by a difference in the dielectric coefficient and/or the conductivity of the pattern.

System and method for retrieving information from an information carrier by means of a capacitive touch screen

The invention describes a system comprising a capacitive information carrier, wherein an electrically conductive layer is arranged on an electrically non-conductive substrate, and a surface sensor, wherein the information carrier is in contact with the surface sensor. Furthermore, the invention comprises a process for acquiring information, comprising a capacitive information carrier, a capacitive surface sensor, a contact between the two elements and an interaction which makes a touch structure of the information carrier evaluable for a data-processing system connected to the surface sensor and can trigger events associated with said information carrier.

System comprising a capacitive information carrier for acquiring information

The invention describes a multiple information carrier having at least one electrically conductive layer and an electorally non-conductive substrate, wherein at least one first electrically conductive layer in the form of a touch structure, and second electrically conductive layer in the form of an antenna, are present in places on the substrate.

Multiple information carrier

The invention relates to an identification system, comprising an information carrier or a group of such information carriers, which allow a clear association of information. The invention further relates to the use of said information carriers, and to a device for reading said information carriers, wherein the information carriers are associated with a random action of a data processing system by way of the structured information layer thereof or can trigger such action. The invention furthermore relates to information carriers for access control systems, payment systems, ticket systems, and marketing application. According to the invention, overlaps of the information layer can be provided by applying additional layers, which achieve several advantages according to the invention, such as optically rendering the information layer unrecognizable, and resulting increased safety of the information carrier against manipulation. In addition, the information layers can be applied in an absolutely level and thin manner onto the carrier material, which enables unlimited further processing.

Identification system and applications

A method teaches how to fill trench structures formed in a semiconductor substrate. The trench structures are coated in a first deposition process with a first primary filling layer with a high conformity and minimal roughness. A V etching reaching down to a predetermined depth of the trench structure is subsequently performed in order to produce a V-profile.

Method for filling trench and relief geometries in semiconductor structures

The invention provides a method for fabricating a memory cell, a substrate () being provided, a trench-type depression () being etched into the substrate (), a barrier layer () being deposited non-conformally in the trench-type depression (), grain elements () being grown on the inner areas of the trench-type depression (), a dielectric layer () being deposited on the surfaces of the grain elements and the inner areas of the trench-type depression, and a conduction layer being deposited on the dielectric layer, the grain elements () growing selectively on the inner areas () of the trench-type depression () in an electrode region () forming a lower region of the trench-type depression () and an amorphous silicon layer continuing to grow in a collar region () forming an upper region of the trench-type depression ().

Memory cell and method for fabricating it

Growing community of inventors

Dresden, Germany

Matthias Foerster