International Business Machines Corporation

Samsung Electronics Co., Ltd.

Matthew Warren Copel

Vijay Narayanan

Eduard Albert Cartier

Supratik Guha

Vamsi Krishna Paruchuri

Rajarao Jammy

Paul Michael Solomon

Nestor A Bojarczuk, Jr

Cyril Cabral, Jr

Evgeni Petrovich Gousev

Martin Michael Frank

David Brian Mitzi

Richard Alan Haight

James Bowler Hannon

Takashi Ando

Josephine B Chang

Yu Luo

Patrick Ronald Varekamp

Douglas Andrew Buchanan

Satoshi Oida

Brian A Bryce

Marcelo A Kuroda

Christine Armstrong

Bruce Bennett Doris

Ali Afzali-Ardakani

Kisik Choi

Damon B Farmer

Thomas M Shaw

Dennis Merton Newns

Barry P Linder

Fenton Read McFeely

Glenn John Martyna

Bruce Gordon Elmegreen

Rudolf M Tromp

Nestor Alexander Bojarczuk, Jr

Lawrence Alfred Clevenger

Michael S Gordon

Hemanth Jagannathan

Keith Kwong Hon Wong

Sivananda K Kanakasabapathy

Michael Patrick Chudzik

Kenneth Parker Rodbell

Talia S Gershon

Paul David Agnello

Young-hee Kim

Francois M d'Heurle

Kevin K Chan

Arne Watson Ballantine

Ying Di Zhang

Rudy J Wojtecki

Alejandro Gabriel Schrott

David William Abraham

Yun-Yu Wang

Paul Charles Jamison

Qi-Zhong Hong

John Rozen

Charles Thomas Rettner

Christopher Peter D'Emic

Ko-Tao Lee

Harald F Okorn-Schmidt

John Jacob Yurkas

Young-Hee Kim

Martin Patrick O'Boyle

Adam M Pyzyna

James Anthony Misewich

Alexander M Friz

Joseph S Newbury

Noel Arellano

Theodore Harold Zabel

Frances Mary Ross

Qi-Zong Hong

Francoise Isabelle Kolmer Le Goues

Michael Horn Von Hoegen

Kyle Erik Litz

Mark Monroe Banaszak Holl

Bruce B Ibm United Kingdom Ltd Doris

Rajarao c/o Ibm United Kingdom Ltd Jammy

Evgeni P c/o Ibm United Kingdom Limited Gousev

Martin M c/o Ibm United Kingdom Limited Frank

Rajarao c/o Ibm United Kingdom Limited Jammy

Embodiments are provided for fabrication of superconducting devices using area-selective deposition of a metal nitride. In some embodiments, a method can include providing a thermally treated carbon layer, and selectively depositing a metal nitride using the thermally treated carbon layer for formation of a superconducting device.

Area-selective deposition of metal nitride to fabricate devices

A superconducting device which includes a substrate, multiple niobium leads formed on the substrate, a niobium silicide (NbSi) passivation layer formed on a surface of at least one of the multiple niobium leads, and an aluminum lead formed directly on at least a portion of the NbSipassivation layer such that an interface therebetween is substantially free of oxygen and oxidized material, where the multiple niobium leads and the aluminum lead are constructed to carry a supercurrent while in use.

Silicide passivation of niobium

A resistive element in an artificial neural network, the resistive element includes a Silicon-on-insulator (SOI) substrate, and a Silicon layer formed on the Silicon-on-insulator substrate. The Silicon layer includes dopants derived from a thin film dopant layer, and the thin film dopant layer includes a programmed amount of dopant including at least one of Boron and Phosphorus.

Artificial neural networks (ANN) including a resistive element based on doped semiconductor elements

A method of forming a resistive random access memory (RRAM) element, the method includes forming a Silicon layer on an oxide layer, depositing a thin film dopant layer on the Silicon layer, and controlling a concentration of the dopant in the thin film dopant layer.

Methods for fabricating artificial neural networks (ANN) based on doped semiconductor resistive random access memory (RRAM) elements

A subtractive forming method that includes providing a material stack including a samarium and selenium containing layer and an aluminum containing layer in direct contact with the samarium and selenium containing layer. The samarium component of the samarium and selenium containing layer of the exposed portion of the material stack is etched with an etch chemistry comprising citric acid and hydrogen peroxide that is selective to the aluminum containing layer. The hydrogen peroxide reacts with the aluminum containing layer to provide an oxide etch protectant surface on the aluminum containing layer, and the citric acid etches samarium selectively to the oxide etch protectant surface. Thereafter, a remaining selenium component of is removed by elevating a temperature of the selenium component.

Wet etching of samarium selenium for piezoelectric processing

Technical solutions are described for forming a semiconductor device for a crosspoint array that implements a pre-programmed neural network. An example method includes sequentially depositing a semiconducting layer, a top insulating layer, and a shunting layer onto a base insulating layer. The method further includes etching selective portions of the top insulating layer corresponding to resistance values associated with weights of the crossbar that implements the neural network.

Pre-programmed resistive cross-point array for neural network

A subtractive forming method for piezoresistive material stacks includes applying an etch chemistry to an exposed first portion of a piezoresistive material stack. The etch chemistry includes a citric acid component for removing a first element of a piezoelectric layer of the piezoresistive material stack selectively to a surface oxide. At least one second element of the piezoelectric layer remains. The method further includes heating the piezoresistive material stack after said applying the etch chemistry to vaporize the at least one second element. A second portion of the piezoresistive material stack is protected from the removal and the heating by a mask.

An apparatus and method for measuring flux, current, or integrated charge of a beam are provided. The apparatus and method include a cup on which the beam is incident. The cup includes an inner cylinder, a coaxial cylinder, and an aperture. The coaxial cylinder surrounds the inner cylinder and is electrically insulated therefrom. An offset current source is in electrical communication with the inner cylinder. An electrometer, a charge integrator, or a counter may be electrically connected to the cup and the offset current source. When the beam is incident on the cup and aligned with the aperture, the electrometer can measure the beam current and the charge integrator can measure the integrated charge of the beam.

Measuring flux, current, or integrated charge of low energy particles

A method of forming a resistive processing unit is provided. The method includes forming a spacer on a substrate. The method further includes forming an intercalation layer segment on opposite sides of the spacer, and replacing a portion of each of the intercalation layer segments with an insulating region. The method further includes replacing the spacer with an electrolyte layer.

Lateral electrochemical cell with symmetric response for neuromorphic computing

A resistive element in an electrochemical artificial neural network, includes a transition metal oxide thin film forming a working electrode, a pair of first electrodes connected to the working electrode, and a reference electrode for electrochemical doping of the working electrode. The biasing of the pair of first electrodes with respect to the reference electrode according to a determination of conductivity between the pair of first electrodes controls the resistance of the working electrode.

Architecture for an electrochemical artificial neural network

A field effect transistor includes a carbon nanotube layer formed adjacent to a gate structure. Two intermetallic contacts are formed on the carbon nanotube layer. The two intermetallic contacts include an oxidation resistant compound having a work function below about 4.4 electron-volts.

Intermetallic contact for carbon nanotube FETs

A piezoelectronic switch device for radio frequency (RF) applications includes a piezoelectric (PE) material layer and a piezoresistive (PR) material layer separated from one another by at least one electrode, wherein an electrical resistance of the PR material layer is dependent upon an applied voltage across the PE material layer by way of an applied pressure to the PR material layer by the PE material layer; and a conductive, high yield material (C-HYM) comprising a housing that surrounds the PE material layer, the PR material layer and the at least one electrode, the C-HYM configured to mechanically transmit a displacement of the PE material layer to the PR material layer such that applied voltage across the PE material layer causes an expansion thereof and an increase the applied pressure to the PR material layer, thereby causing a decrease in the electrical resistance of the PR material layer.

Piezoelectronic switch device for RF applications

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Yorktown Heights, NY, United States of America

Matthew Warren Copel