Other

Matthew W Barlow

James A Holmes

Nicholas J Chiolino

Anthony Matt Francis

Jacob Kupernik

Ian Getreu

Brandon Dyer

A Matthew Francis

Sonia M Perez

An ultraviolet detecting silicon carbide junction field effect transistor with a transistor gate junction positioned proximate to the outer surface to receive ultraviolet: light and flow an ultraviolet light induced photo current when reverse biased.

Ultraviolet sensors and methods using integrated silicon carbide lateral junction field-effect transistors

A multi-layer ceramic wiring board is patterned with arrays of footprints for high-temperature surface mounted device active and passive components on one side of the board that is patterned with arrays of standard SMD footprints to enable placement and attachment of components including primary 2-terminal components and active components where the SMD pads are connected through vias and buried-layer interconnect traces to a multiple connection point arrays on the front and back side of the ceramic wiring board. Each pad is connected to multiple instances of the pad grid to connections to be made with a single post-fired print.

Rapid implementation of high-temperature analog interface electronics

An improved electrical circuit for logic output level shifting using SiC JFETs with resistors on the input, inverting, stage and using diode degenerated JFET sources in the output stage.

SiC jfet logic output level-shifting using integrated-series forward-biased jfet gate-to-channel diode junctions

A silicon carbide die package with multiple wire access points utilizing top and bottom enclosure plate clamps housing a silicon carbide die on a printed wiring board with wire contact pads, and a set of set screws providing downward pressure from the top enclosure plate inside the center of a cylindrical isolation housing to an isolation ball positioned above a clamp discs to clamp a wire end between the clamp disc and the wire contact pad.

Multiwire plate-enclosed ball-isolated single-substrate silicon-carbide-die package

An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode. the circuit teaches an integrated diode rectification circuit for use with a two phase center tap transformer having a first voltage output, a second voltage output, and a center tap output with a single chip having a first half-wave rectifier connected to the first voltage output, a second half-wave rectifier connected to the second voltage output, and a floating substrate connection connected to the center tap output and an on chip first channel-to-substrate isolation diode electrically connected between the first half-wave rectifier and the floating substrate.

Integrated silicon carbide diode rectifier circuits

An improved silicon carbide wafer using direct application conductive ink interconnects positioned on printing connection pads. The conductive ink interconnected can be routed to form a custom length resistive trace for a device after fabrication and measurement of the device.

Direct application additive manufacturing for conductive wafer interconnect

An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode.

Growing community of inventors

Springdale, AR, United States of America

Matthew W Barlow