USA As Represented by Secretary of the Navy

Matthew T Hardy

David J Meyer

Brian P Downey

Neeraj Nepal

Vikrant J Gokhale

D Scott Katzer

Eric N Jin

Acoustic wave devices based on epitaxially grown heterostructures comprising appropriate combinations of epitaxially grown metallic transition metal nitride (TMN) layers, epitaxially grown Group III-nitride (III-N) piezoelectric semiconductor thin film layers, and epitaxially grown perovskite oxide (PO) layers. The devices can include bulk acoustic wave (BAW) devices, surface acoustic wave (SAW) devices, high overtone bulk acoustic resonator (HBAR) devices, and composite devices comprising HBAR devices integrated with high-electron-mobility transistors (HEMTs).

Multifunctional integrated acoustic devices and systems using epitaxial materials

A semiconductor device structure including a scandium (Sc)- or yttrium (Y)-containing material layer situated between a substrate and one or more overlying layers. The Sc- or Y-containing material layer serves as an etch-stop during fabrication of one or more devices from overlying layers situated above the Sc- or Y-containing material layer. The Sc- or Y-containing material layer can be grown within an epitaxial group III-nitride device structure for applications such as electronics, optoelectronics, and acoustoelectronics, and can improve the etch-depth accuracy, reproducibility and uniformity.

Scandium-containing III-N etch-stop layers for selective etching of III-nitrides and related materials

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Arlington, VA, United States of America

Matthew T Hardy